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Title: Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems

Authors:
; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
ER 46940-DE-SC0010597
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 117 Journal Issue: 2; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1260999

Cheng, Bin, Wu, Yong, Wang, Peng, Pan, Cheng, Taniguchi, T., Watanabe, K., and Bockrath, M.. Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems. United States: N. p., Web. doi:10.1103/PhysRevLett.117.026601.
Cheng, Bin, Wu, Yong, Wang, Peng, Pan, Cheng, Taniguchi, T., Watanabe, K., & Bockrath, M.. Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems. United States. doi:10.1103/PhysRevLett.117.026601.
Cheng, Bin, Wu, Yong, Wang, Peng, Pan, Cheng, Taniguchi, T., Watanabe, K., and Bockrath, M.. 2016. "Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems". United States. doi:10.1103/PhysRevLett.117.026601.
@article{osti_1260999,
title = {Gate-Tunable Landau Level Filling and Spectroscopy in Coupled Massive and Massless Electron Systems},
author = {Cheng, Bin and Wu, Yong and Wang, Peng and Pan, Cheng and Taniguchi, T. and Watanabe, K. and Bockrath, M.},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.026601},
journal = {Physical Review Letters},
number = 2,
volume = 117,
place = {United States},
year = {2016},
month = {7}
}

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Boron nitride substrates for high-quality graphene electronics
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