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Title: Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1260846
Grant/Contract Number:  
EEC-1041895
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Name: Journal of Physics. D, Applied Physics Journal Volume: 49 Journal Issue: 30; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well. United Kingdom: N. p., 2016. Web. doi:10.1088/0022-3727/49/30/305102.
Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, & Honsberg, Christiana B. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well. United Kingdom. doi:10.1088/0022-3727/49/30/305102.
Kim, Yeongho, Faleev, Nikolai N., Ban, Keun-Yong, Kim, Jun Oh, Lee, Sang Jun, and Honsberg, Christiana B. Thu . "Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well". United Kingdom. doi:10.1088/0022-3727/49/30/305102.
@article{osti_1260846,
title = {Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well},
author = {Kim, Yeongho and Faleev, Nikolai N. and Ban, Keun-Yong and Kim, Jun Oh and Lee, Sang Jun and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1088/0022-3727/49/30/305102},
journal = {Journal of Physics. D, Applied Physics},
number = 30,
volume = 49,
place = {United Kingdom},
year = {2016},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1088/0022-3727/49/30/305102

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