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Title: Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

Abstract

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

Authors:
 [1];  [2];  [3];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
  3. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260481
Alternate Identifier(s):
OSTI ID: 1247186
Report Number(s):
LLNL-JRNL-678147
Journal ID: ISSN 0022-3727
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Volume: 49; Journal Issue: 19; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O. Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC. United States: N. p., 2016. Web. doi:10.1088/0022-3727/49/19/19LT01.
Bayu Aji, L. B., Wallace, J. B., Shao, L., & Kucheyev, S. O. Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC. United States. doi:10.1088/0022-3727/49/19/19LT01.
Bayu Aji, L. B., Wallace, J. B., Shao, L., and Kucheyev, S. O. Thu . "Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC". United States. doi:10.1088/0022-3727/49/19/19LT01. https://www.osti.gov/servlets/purl/1260481.
@article{osti_1260481,
title = {Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC},
author = {Bayu Aji, L. B. and Wallace, J. B. and Shao, L. and Kucheyev, S. O.},
abstractNote = {Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.},
doi = {10.1088/0022-3727/49/19/19LT01},
journal = {Journal of Physics. D, Applied Physics},
number = 19,
volume = 49,
place = {United States},
year = {2016},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 5 works
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