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Title: Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.
Authors:
 [1] ;  [2] ;  [3] ;  [1] ;  [1] ;  [3] ;  [4]
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Univ. of California, Riverside, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. The Ohio State Univ., Columbus, OH (United States); Univ. of California, Riverside, CA (United States)
Publication Date:
Report Number(s):
SAND2015-10742J
Journal ID: ISSN 0022-0248; PII: S0022024816302032
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 447; Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; A3. Molecular beam epitaxy; B1. Oxides; B1. Perovskites; B1. Graphene
OSTI Identifier:
1259540
Alternate Identifier(s):
OSTI ID: 1359323

Ahmed, Adam S., Wen, Hua, Ohta, Taisuke, Pinchuk, Igor V., Zhu, Tiancong, Beechem, Thomas, and Kawakami, Roland K.. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides. United States: N. p., Web. doi:10.1016/j.jcrysgro.2016.04.057.
Ahmed, Adam S., Wen, Hua, Ohta, Taisuke, Pinchuk, Igor V., Zhu, Tiancong, Beechem, Thomas, & Kawakami, Roland K.. Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides. United States. doi:10.1016/j.jcrysgro.2016.04.057.
Ahmed, Adam S., Wen, Hua, Ohta, Taisuke, Pinchuk, Igor V., Zhu, Tiancong, Beechem, Thomas, and Kawakami, Roland K.. 2016. "Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides". United States. doi:10.1016/j.jcrysgro.2016.04.057. https://www.osti.gov/servlets/purl/1259540.
@article{osti_1259540,
title = {Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides},
author = {Ahmed, Adam S. and Wen, Hua and Ohta, Taisuke and Pinchuk, Igor V. and Zhu, Tiancong and Beechem, Thomas and Kawakami, Roland K.},
abstractNote = {Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.},
doi = {10.1016/j.jcrysgro.2016.04.057},
journal = {Journal of Crystal Growth},
number = C,
volume = 447,
place = {United States},
year = {2016},
month = {4}
}