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Title: III-nitride quantum dots for ultra-efficient solid-state lighting

Abstract

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.

Authors:
 [1];  [1];  [2];  [2]
  1. Lehigh Univ., Bethlehem, PA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1259487
Alternate Identifier(s):
OSTI ID: 1401676
Report Number(s):
SAND2016-4540J
Journal ID: ISSN 1863-8880; 640185
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Laser & Photonics Reviews
Additional Journal Information:
Journal Volume: 10; Journal Issue: 4; Journal ID: ISSN 1863-8880
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wierer, Jr., Jonathan J., Tansu, Nelson, Fischer, Arthur J., and Tsao, Jeffrey Y. III-nitride quantum dots for ultra-efficient solid-state lighting. United States: N. p., 2016. Web. doi:10.1002/lpor.201500332.
Wierer, Jr., Jonathan J., Tansu, Nelson, Fischer, Arthur J., & Tsao, Jeffrey Y. III-nitride quantum dots for ultra-efficient solid-state lighting. United States. doi:10.1002/lpor.201500332.
Wierer, Jr., Jonathan J., Tansu, Nelson, Fischer, Arthur J., and Tsao, Jeffrey Y. Mon . "III-nitride quantum dots for ultra-efficient solid-state lighting". United States. doi:10.1002/lpor.201500332. https://www.osti.gov/servlets/purl/1259487.
@article{osti_1259487,
title = {III-nitride quantum dots for ultra-efficient solid-state lighting},
author = {Wierer, Jr., Jonathan J. and Tansu, Nelson and Fischer, Arthur J. and Tsao, Jeffrey Y.},
abstractNote = {III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of higher spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.},
doi = {10.1002/lpor.201500332},
journal = {Laser & Photonics Reviews},
number = 4,
volume = 10,
place = {United States},
year = {2016},
month = {5}
}

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