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Title: Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs / In ( As , Sb ) Type-II Superlattices

Abstract

A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [1];  [1]
  1. Univ. of Iowa, Iowa City, IA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1259474
Report Number(s):
SAND2016-5485J
Journal ID: ISSN 2331-7019; PRAHB2; 641590
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2331-7019
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., and Boggess, T. F. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices. United States: N. p., 2016. Web. https://doi.org/10.1103/physrevapplied.5.054016.
Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., & Boggess, T. F. Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices. United States. https://doi.org/10.1103/physrevapplied.5.054016
Aytac, Y., Olson, B. V., Kim, J. K., Shaner, E. A., Hawkins, S. D., Klem, J. F., Flatté, M. E., and Boggess, T. F. Wed . "Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices". United States. https://doi.org/10.1103/physrevapplied.5.054016. https://www.osti.gov/servlets/purl/1259474.
@article{osti_1259474,
title = {Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in InAs/In(As,Sb) Type-II Superlattices},
author = {Aytac, Y. and Olson, B. V. and Kim, J. K. and Shaner, E. A. and Hawkins, S. D. and Klem, J. F. and Flatté, M. E. and Boggess, T. F.},
abstractNote = {A set of seven InAs/InAsSb type-II superlattices (T2SLs) were designed to have speci c bandgap energies between 290 meV (4.3 m) and 135 meV (9.2 m) in order to study the e ects of the T2SL bandgap energy on the minority carrier lifetime. A temperature dependent optical pump-probe technique is used to measure the carrier lifetimes, and the e ect of a mid-gap defect level on the carrier recombination dynamics is reported. The Shockley-Read-Hall (SRH) defect state is found to be at energy of approximately -250 12 meV relative to the valence band edge of bulk GaSb for the entire set of T2SL structures, even though the T2SL valence band edge shifts by 155 meV on the same scale. These results indicate that the SRH defect state in InAs/InAsSb T2SLs is singular and is nearly independent of the exact position of the T2SL bandgap or band edge energies. They also suggest the possibility of engineering the T2SL structure such that the SRH state is removed completely from the bandgap, a result that should signi cantly increase the minority carrier lifetime.},
doi = {10.1103/physrevapplied.5.054016},
journal = {Physical Review Applied},
number = 5,
volume = 5,
place = {United States},
year = {2016},
month = {6}
}

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Works referenced in this record:

Growth of InAs 1− x Sb x (0< x <1) and InSb‐InAsSb superlattices by molecular beam epitaxy
journal, December 1985

  • Lee, G. S.; Lo, Y.; Lin, Y. F.
  • Applied Physics Letters, Vol. 47, Issue 11
  • DOI: 10.1063/1.96334

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
journal, November 2009

  • Donetsky, Dmitry; Svensson, Stefan P.; Vorobjev, Leonid E.
  • Applied Physics Letters, Vol. 95, Issue 21
  • DOI: 10.1063/1.3267103

Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice
journal, March 2014

  • Klein, Brianna; Gautam, Nutan; Plis, Elena
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 2
  • DOI: 10.1116/1.4862085

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013

  • Olson, B. V.; Shaner, E. A.; Kim, J. K.
  • Applied Physics Letters, Vol. 103, Issue 5
  • DOI: 10.1063/1.4817400

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
journal, July 2014

  • Aytac, Y.; Olson, B. V.; Kim, J. K.
  • Applied Physics Letters, Vol. 105, Issue 2
  • DOI: 10.1063/1.4890578

Carrier transport properties of Be-doped InAs/InAsSb type-II infrared superlattices
journal, January 2014

  • Steenbergen, E. H.; Elhamri, S.; Mitchel, W. C.
  • Applied Physics Letters, Vol. 104, Issue 1
  • DOI: 10.1063/1.4861159

Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices
journal, September 2015

  • Aytac, Y.; Olson, B. V.; Kim, J. K.
  • Journal of Applied Physics, Vol. 118, Issue 12
  • DOI: 10.1063/1.4931419

Intensity- and Temperature-Dependent Carrier Recombination in InAs / In As 1 x S b x Type-II Superlattices
journal, April 2015


Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices
journal, February 2016


Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
journal, May 2011


Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
journal, August 2012

  • Olson, B. V.; Shaner, E. A.; Kim, J. K.
  • Applied Physics Letters, Vol. 101, Issue 9
  • DOI: 10.1063/1.4749842

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
journal, December 2011

  • Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D.
  • Applied Physics Letters, Vol. 99, Issue 25
  • DOI: 10.1063/1.3671398

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
journal, December 2015

  • Olson, B. V.; Grein, C. H.; Kim, J. K.
  • Applied Physics Letters, Vol. 107, Issue 26
  • DOI: 10.1063/1.4939147

Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors
journal, September 2013

  • Grein, C. H.; Flatte, M. E.; Evans, A. J.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 19, Issue 5
  • DOI: 10.1109/JSTQE.2012.2222358

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
journal, February 2002

  • Rein, S.; Rehrl, T.; Warta, W.
  • Journal of Applied Physics, Vol. 91, Issue 4
  • DOI: 10.1063/1.1428095

Post growth annealing study on long wavelength infrared InAs/GaSb superlattices
journal, March 2012

  • Haugan, H. J.; Brown, G. J.; Elhamri, S.
  • Journal of Applied Physics, Vol. 111, Issue 5
  • DOI: 10.1063/1.3693535

Theoretical study of native defects in III-V semiconductors
journal, January 1983


Valence-band anticrossing in mismatched III-V semiconductor alloys
journal, January 2007


    Works referencing / citing this record:

    A designing principle for low dark-current strained layer superlattices
    journal, January 2017

    • Krishnamurthy, S.; Yu, Zhi-Gang
    • Applied Physics Letters, Vol. 110, Issue 2
    • DOI: 10.1063/1.4974031

    Theoretical study of native point defects in strained-layer superlattice systems
    journal, April 2018

    • Krishnamurthy, S.; Yu, Zhi Gang
    • Journal of Applied Physics, Vol. 123, Issue 16
    • DOI: 10.1063/1.5004176

    Transition levels of intrinsic defects in type-II InAs/InAs 0.5 Sb 0.5 strained-layer superlattices
    journal, October 2019

    • Miao, Maosheng; Kioussis, Nicholas; Grein, Christoph H.
    • Applied Physics Letters, Vol. 115, Issue 15
    • DOI: 10.1063/1.5110165

    Trap parameters in the infrared InAsSb absorber found by capacitance and noise measurements
    journal, September 2019

    • Ciura, Lukasz; Kolek, Andrzej; Gomółka, Emilia
    • Semiconductor Science and Technology, Vol. 34, Issue 10
    • DOI: 10.1088/1361-6641/ab3c02