Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

doi:10.1063/1.4953399

Title: Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

Abstract

We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 1010 cm−2 to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 1011 cm−2, the effective mass m* is ∼0.105 m0, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

Authors:

Laroche, D. ^[1]; Huang, S. -H. ^[2]; Chuang, Y. ^[2]; Li, J. -Y. ^[2]; Liu, C. W. ^[2]; Lu, T. M. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan)

Publication Date:: Mon Jun 06 00:00:00 EDT 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1259472

Alternate Identifier(s):: OSTI ID: 1420585

Report Number(s):: SAND-2016-5286J
Journal ID: ISSN 0003-6951; APPLAB; 641118

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 108; Journal Issue: 23; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats


                    Laroche, D., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., and Lu, T. M. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4953399.

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                    Laroche, D., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., & Lu, T. M. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure.  United States.  https://doi.org/10.1063/1.4953399

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                    Laroche, D., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., and Lu, T. M. Mon .  
"Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure".  United States.  https://doi.org/10.1063/1.4953399.  https://www.osti.gov/servlets/purl/1259472.

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@article{osti_1259472,

  title        = {Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure},

  author       = {Laroche, D. and Huang, S. -H. and Chuang, Y. and Li, J. -Y. and Liu, C. W. and Lu, T. M.},

  abstractNote = {We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0.2Ge0.8 heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 1010 cm−2 to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 1011 cm−2, the effective mass m* is ∼0.105 m0, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.},

  doi          = {10.1063/1.4953399},

  journal      = {Applied Physics Letters},

  number       = 23,

  volume       = 108,

  place        = {United States},

  year         = {Mon Jun 06 00:00:00 EDT 2016},

  month        = {Mon Jun 06 00:00:00 EDT 2016}

}

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Title: Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

Abstract

Citation Formats

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators journal, December 2010

Magnetotransport in p-type Ge quantum well narrow wire arrays journal, April 2015

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas journal, November 2014

Cyclotron mass of two-dimensional holes in (100) oriented GaAs∕AlGaAs heterostructures journal, January 2008

Ultra-high hole mobility exceeding one million in a strained germanium quantum well journal, October 2012

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers journal, October 2009

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures journal, September 2009

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well journal, March 2014

High-mobility Si and Ge structures journal, December 1997

Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure journal, November 2009

p-type Ge-channel MODFETs with high transconductance grown on Si substrates journal, April 1993

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer journal, June 2014

Magnetotransport properties of Ge channels with extremely high compressive strain journal, October 2006

2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms journal, June 2006

Compressive strain dependence of hole mobility in strained Ge channels journal, November 2005

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures journal, May 2012

Scattering mechanisms in shallow undoped Si/SiGe quantum wells journal, October 2015

Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures journal, July 1993

Effective mass in remotely doped Ge quantum wells journal, February 2003

High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance journal, April 1994

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures journal, March 2003

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures journal, August 2007

High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures journal, February 2001

Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures journal, August 2006

Ultra high hole mobilities in a pure strained Ge quantum well journal, April 2014

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs journal, May 2009

Acoustoelectric effects in very high-mobility p -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields journal, August 2013

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition journal, January 2014

On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures journal, January 2008

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure journal, May 1991

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Electronic properties of two-dimensional systems journal, April 1982

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Magnetotransport studies of remote doped Si/Si1−xGex heterostructures grown on relaxed SiGe buffer layers journal, December 1992

Study on interface roughness in single quantum wells journal, January 1992

Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures journal, July 2015

Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells journal, April 1996

Low-field transport coefficients in GaAs/ Ga 1 − x Al x As heterostructures journal, January 1989

Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells journal, September 2014

Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells text, January 1996

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well text, January 2014

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure text, January 2009

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields text, January 2013

Competing quantum Hall phases in the second Landau level in low density limit text, January 2014

The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells text, January 2014

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k -cubic spin–orbit coupling journal, October 2017

Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures journal, September 2017

Single and double hole quantum dots in strained Ge/SiGe quantum wells journal, March 2019

Light effective hole mass in undoped Ge/SiGe quantum wells journal, July 2019

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology journal, January 2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells text, January 2018

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system text, January 2017

Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators
journal, December 2010

Magnetotransport in p-type Ge quantum well narrow wire arrays
journal, April 2015

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
journal, November 2014

Cyclotron mass of two-dimensional holes in (100) oriented GaAs∕AlGaAs heterostructures
journal, January 2008

Ultra-high hole mobility exceeding one million in a strained germanium quantum well
journal, October 2012

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
journal, October 2009

Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
journal, September 2009

Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well
journal, March 2014

High-mobility Si and Ge structures
journal, December 1997

Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure
journal, November 2009

p-type Ge-channel MODFETs with high transconductance grown on Si substrates
journal, April 1993

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer
journal, June 2014

Magnetotransport properties of Ge channels with extremely high compressive strain
journal, October 2006

2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms
journal, June 2006

Compressive strain dependence of hole mobility in strained Ge channels
journal, November 2005

Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
journal, May 2012

Scattering mechanisms in shallow undoped Si/SiGe quantum wells
journal, October 2015

Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures
journal, July 1993

Effective mass in remotely doped Ge quantum wells
journal, February 2003

High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance
journal, April 1994

Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
journal, March 2003

Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
journal, August 2007

High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures
journal, February 2001

Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures
journal, August 2006

Ultra high hole mobilities in a pure strained Ge quantum well
journal, April 2014

Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs
journal, May 2009

Acoustoelectric effects in very high-mobility p -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
journal, August 2013

An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
journal, January 2014

On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
journal, January 2008

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure
journal, May 1991

Hall field-induced resistance oscillations in a $p$ -type Ge/SiGe quantum well
journal, October 2014

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained- $Ge / SiGe$ Quantum Well
journal, August 2014

Electronic properties of two-dimensional systems
journal, April 1982

Intrinsic Gap of the $ν = 5 / 2$ Fractional Quantum Hall State
journal, April 2008

Competing quantum Hall phases in the second Landau level in the low-density limit
journal, June 2014

Colloquium : Transport in strongly correlated two dimensional electron fluids
journal, May 2010

Magnetotransport studies of remote doped Si/Si1−xGex heterostructures grown on relaxed SiGe buffer layers
journal, December 1992

Study on interface roughness in single quantum wells
journal, January 1992

Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures
journal, July 2015

Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells
journal, April 1996

Low-field transport coefficients in GaAs/ ${Ga}_{1 - x}$ ${Al}_{x}$ As heterostructures
journal, January 1989

Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
journal, September 2014

Theory for the cyclotron resonance of holes in strained asymmetric Ge-SiGe quantum wells
text, January 1996

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well
text, January 2014

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure
text, January 2009

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields
text, January 2013

Competing quantum Hall phases in the second Landau level in low density limit
text, January 2014

The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
text, January 2014

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k -cubic spin–orbit coupling
journal, October 2017

Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
journal, September 2017

Single and double hole quantum dots in strained Ge/SiGe quantum wells
journal, March 2019

Light effective hole mass in undoped Ge/SiGe quantum wells
journal, July 2019

Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
journal, January 2019

Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
text, January 2018

Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
text, January 2017