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Title: Electronic and chemical structure of the H 2O/GaN(0001) interface under ambient conditions

We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H 2O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to H 2O at room temperature. However, the GaN surface work function was slightly reduced due to the adsorption of molecular H 2O and its dissociation products. At elevated temperatures, a negative charge generated on the surface by a vigorous H 2O/GaN interfacial chemistry induced an increase in both the surface work function and upward band bending. We tracked the dissociative adsorption of H 2O onto the GaN(0001) surface by recording the core-level photoemission spectra and obtained the electronic and chemical properties at the H 2O/GaN interface under operando conditions. In conclusion, our results suggest a strong correlation between the electronic and chemical properties of the material surface, and we expect that their evolutions lead to significantly different properties at the electrolyte/ electrode interface in a photoelectrochemical solar cell.
Authors:
 [1] ;  [2]
  1. Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab. (NDRL); Dept. of Chemistry and Biochemistry
  2. Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab. (NDRL); Dept. of Physics
Publication Date:
Grant/Contract Number:
FC02-04ER15533
Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Research Org:
Univ. of Notre Dame, IN (United States). Notre Dame Radiation Lab.
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1258572