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Title: Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
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  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Grant/Contract Number:
FG02-04ER46147; FG02‐03ER46028; AC02-06CH11357
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 6; Journal ID: ISSN 2166-532X
American Institute of Physics (AIP)
Research Org:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE; electrodes; quantum wells; x-ray diffraction; heterojunctions; quantum dots; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1306380; OSTI ID: 1356353