III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials
Abstract
We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1257797
- Report Number(s):
- SAND-2016-4320J
Journal ID: ISSN 2195-1071; 639556; TRN: US1601757
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Optical Materials
- Additional Journal Information:
- Journal Name: Advanced Optical Materials; Journal ID: ISSN 2195-1071
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 3D metamaterials; III–V semiconductors; dielectric resonators; metasurfaces; Mie resonances
Citation Formats
Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., and Brener, Igal. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials. United States: N. p., 2016.
Web. doi:10.1002/adom.201600240.
Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., & Brener, Igal. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials. United States. https://doi.org/10.1002/adom.201600240
Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., and Brener, Igal. Fri .
"III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials". United States. https://doi.org/10.1002/adom.201600240. https://www.osti.gov/servlets/purl/1257797.
@article{osti_1257797,
title = {III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials},
author = {Liu, Sheng and Keeler, Gordon A. and Reno, John L. and Sinclair, Michael B. and Brener, Igal},
abstractNote = {We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.},
doi = {10.1002/adom.201600240},
journal = {Advanced Optical Materials},
number = ,
volume = ,
place = {United States},
year = {Fri Jun 10 00:00:00 EDT 2016},
month = {Fri Jun 10 00:00:00 EDT 2016}
}
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