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Title: III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

Abstract

We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1257797
Report Number(s):
SAND-2016-4320J
Journal ID: ISSN 2195-1071; 639556; TRN: US1601757
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Optical Materials
Additional Journal Information:
Journal Name: Advanced Optical Materials; Journal ID: ISSN 2195-1071
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 3D metamaterials; III–V semiconductors; dielectric resonators; metasurfaces; Mie resonances

Citation Formats

Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., and Brener, Igal. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials. United States: N. p., 2016. Web. doi:10.1002/adom.201600240.
Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., & Brener, Igal. III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials. United States. doi:10.1002/adom.201600240.
Liu, Sheng, Keeler, Gordon A., Reno, John L., Sinclair, Michael B., and Brener, Igal. Fri . "III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials". United States. doi:10.1002/adom.201600240. https://www.osti.gov/servlets/purl/1257797.
@article{osti_1257797,
title = {III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials},
author = {Liu, Sheng and Keeler, Gordon A. and Reno, John L. and Sinclair, Michael B. and Brener, Igal},
abstractNote = {We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.},
doi = {10.1002/adom.201600240},
journal = {Advanced Optical Materials},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {6}
}

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Cited by: 16 works
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