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Title: Anharmonicity in light scattering by optical phonons in GaAs 1- xBi x

Abstract

We present a Raman spectroscopic study of GaAs 1-xBi x epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO' GaAs) of GaAs 1-xBi x for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs 1-xBi x as evident from the increase in the anharmonicity constants. Additionally, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs 1-xBi x.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [2];  [3]; ORCiD logo [1]
  1. Indian Inst. of Science Education and Research Thiruvananthapuram (IISERTVM), Kerala (India)
  2. Jawaharlal Nehru Center for Advanced Scientific Research (JNCASR), Bangalore (India)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1257752
Alternate Identifier(s):
OSTI ID: 1421082
Report Number(s):
NREL/JA-5K00-66640
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 20; Related Information: Journal of Applied Physics; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; III-V semiconductors; linewidths; bismuth; thermoelectric effects; red shift; anharmonicity constants; crystal structure; crystal lattices; crystallographic defects; Raman spectroscopy; light scattering; epitaxy; thermal effects; elastic scattering; phonons

Citation Formats

Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, Angelo, and Kini, R. N. Anharmonicity in light scattering by optical phonons in GaAs1-xBix. United States: N. p., 2016. Web. doi:10.1063/1.4952381.
Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, Angelo, & Kini, R. N. Anharmonicity in light scattering by optical phonons in GaAs1-xBix. United States. doi:10.1063/1.4952381.
Joshya, R. S., Rajaji, V., Narayana, Chandrabhas, Mascarenhas, Angelo, and Kini, R. N. Wed . "Anharmonicity in light scattering by optical phonons in GaAs1-xBix". United States. doi:10.1063/1.4952381. https://www.osti.gov/servlets/purl/1257752.
@article{osti_1257752,
title = {Anharmonicity in light scattering by optical phonons in GaAs1-xBix},
author = {Joshya, R. S. and Rajaji, V. and Narayana, Chandrabhas and Mascarenhas, Angelo and Kini, R. N.},
abstractNote = {We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LO'GaAs) of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. Additionally, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix.},
doi = {10.1063/1.4952381},
journal = {Journal of Applied Physics},
number = 20,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}

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