skip to main content

DOE PAGESDOE PAGES

Title: Pressure-induced phase transition in La 1 x Sm x O 0.5 F 0.5 BiS 2

Electrical resistivity measurements on La 1–xSm xO 0.5F 0.5BiS 2 (x = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature T c of each sample significantly increases at a Sm-concentration dependent pressure P t, indicating a pressure-induced phase transition from a low-T c to a high-T c phase. At ambient pressure, T c increases dramatically from 2.8 K at x = 0.1 to 5.4 K at x = 0.8; however, the T c values at P > P t decrease slightly with x and P t shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. Furthermore, these results suggest that the pressure dependence of T c for the BiS 2-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of T c for SmO 0.5F 0.5BiS 2 under pressure.
Authors:
 [1] ;  [1] ;  [1] ;  [1]
  1. Univ. of California, San Diego, La Jolla, CA (United States)
Publication Date:
Grant/Contract Number:
NA0002909; NA0001841; FG02-04ER46105
Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 9; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Research Org:
Univ. of California, San Diego, CA (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1257505
Alternate Identifier(s):
OSTI ID: 1215778