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Title: Neutron-irradiation creep of silicon carbide materials beyond the initial transient

Abstract

Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.

Authors:
 [1];  [2];  [3];  [3];  [4];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Japan Atomic Energy Agency, Aomori (Japan)
  3. Kyoto Univ., Kyoto (Japan)
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Fusion Energy Sciences (FES); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1256813
Alternate Identifier(s):
OSTI ID: 1325376
Grant/Contract Number:  
AC05-00OR22725; C05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 478; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Katoh, Yutai, Ozawa, Kazumi, Shimoda, Kazuya, Hinoki, Tatsuya, Snead, Lance Lewis, and Koyanagi, Takaaki. Neutron-irradiation creep of silicon carbide materials beyond the initial transient. United States: N. p., 2016. Web. doi:10.1016/j.jnucmat.2016.06.006.
Katoh, Yutai, Ozawa, Kazumi, Shimoda, Kazuya, Hinoki, Tatsuya, Snead, Lance Lewis, & Koyanagi, Takaaki. Neutron-irradiation creep of silicon carbide materials beyond the initial transient. United States. https://doi.org/10.1016/j.jnucmat.2016.06.006
Katoh, Yutai, Ozawa, Kazumi, Shimoda, Kazuya, Hinoki, Tatsuya, Snead, Lance Lewis, and Koyanagi, Takaaki. Sat . "Neutron-irradiation creep of silicon carbide materials beyond the initial transient". United States. https://doi.org/10.1016/j.jnucmat.2016.06.006. https://www.osti.gov/servlets/purl/1256813.
@article{osti_1256813,
title = {Neutron-irradiation creep of silicon carbide materials beyond the initial transient},
author = {Katoh, Yutai and Ozawa, Kazumi and Shimoda, Kazuya and Hinoki, Tatsuya and Snead, Lance Lewis and Koyanagi, Takaaki},
abstractNote = {Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for the other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10–7 [dpa–1 MPa–1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.},
doi = {10.1016/j.jnucmat.2016.06.006},
journal = {Journal of Nuclear Materials},
number = C,
volume = 478,
place = {United States},
year = {2016},
month = {6}
}

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Works referencing / citing this record:

Interlaboratory round robin study on axial tensile properties of SiC-SiC CMC tubular test specimens
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