High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; Watkins, S. P.

doi:10.1016/j.jlumin.2016.01.028

Title: High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

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Abstract

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. In this paper, we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I₁₀ bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I₁₀ line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I₁₀ transition are unambiguously identified and yield a donor binding energy of 71 meV. Finally, in contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn_Zn double donor compensated by an unknown single acceptor.

Authors:

Kumar, E. Senthil ^[1]; Mohammadbeigi, F. ^[1]; Boatner, Lynn A. ^[2]; Watkins, S. P. ^[1]

Simon Fraser Univ., Burnaby, BC (Canada)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: 2016-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Natural Sciences and Engineering Research Council of Canada (NSERC)

OSTI Identifier:: 1256812

Alternate Identifier(s):: OSTI ID: 1261287; OSTI ID: 1339003

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Luminescence

Additional Journal Information:: Journal Volume: 176; Journal ID: ISSN 0022-2313

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; zinc oxide; photoluminescence; electrical transport; dopants; Sn

Citation Formats


                    Kumar, E. Senthil, Mohammadbeigi, F., Boatner, Lynn A., and Watkins, S. P. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals.  United States: N. p., 2016. 
Web.  doi:10.1016/j.jlumin.2016.01.028.

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                    Kumar, E. Senthil, Mohammadbeigi, F., Boatner, Lynn A., & Watkins, S. P. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals.  United States.  https://doi.org/10.1016/j.jlumin.2016.01.028

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                    Kumar, E. Senthil, Mohammadbeigi, F., Boatner, Lynn A., and Watkins, S. P. Fri .  
"High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals".  United States.  https://doi.org/10.1016/j.jlumin.2016.01.028.  https://www.osti.gov/servlets/purl/1256812.

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@article{osti_1256812,

  title        = {High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals},

  author       = {Kumar, E. Senthil and Mohammadbeigi, F. and Boatner, Lynn A. and Watkins, S. P.},

  abstractNote = {Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. In this paper, we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. Finally, in contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a SnZn double donor compensated by an unknown single acceptor.},

  doi          = {10.1016/j.jlumin.2016.01.028},

  journal      = {Journal of Luminescence},

  number       = ,

  volume       = 176,

  place        = {United States},

  year         = {2016},

  month        = {1}

}

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