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Title: Parallel stitching of 2D materials

Abstract

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [3];  [2];  [1];  [1];  [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. National Tsing-Hua Univ., Hsinchu (Taiwan)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1255728
Report Number(s):
BNL-112246-2016-JA
Journal ID: ISSN 0935-9648; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 12; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Ling, Xi, Wu, Lijun, Lin, Yuxuan, Ma, Qiong, Wang, Ziqiang, Song, Yi, Yu, Lili, Huang, Shengxi, Fang, Wenjing, Zhang, Xu, Hsu, Allen L., Bie, Yaqing, Lee, Yi -Hsien, Zhu, Yimei, Li, Ju, Jarillo-Herrero, Pablo, Dresselhaus, Mildred, Palacios, Tomas, and Kong, Jing. Parallel stitching of 2D materials. United States: N. p., 2016. Web. doi:10.1002/adma.201505070.
Ling, Xi, Wu, Lijun, Lin, Yuxuan, Ma, Qiong, Wang, Ziqiang, Song, Yi, Yu, Lili, Huang, Shengxi, Fang, Wenjing, Zhang, Xu, Hsu, Allen L., Bie, Yaqing, Lee, Yi -Hsien, Zhu, Yimei, Li, Ju, Jarillo-Herrero, Pablo, Dresselhaus, Mildred, Palacios, Tomas, & Kong, Jing. Parallel stitching of 2D materials. United States. doi:10.1002/adma.201505070.
Ling, Xi, Wu, Lijun, Lin, Yuxuan, Ma, Qiong, Wang, Ziqiang, Song, Yi, Yu, Lili, Huang, Shengxi, Fang, Wenjing, Zhang, Xu, Hsu, Allen L., Bie, Yaqing, Lee, Yi -Hsien, Zhu, Yimei, Li, Ju, Jarillo-Herrero, Pablo, Dresselhaus, Mildred, Palacios, Tomas, and Kong, Jing. Wed . "Parallel stitching of 2D materials". United States. doi:10.1002/adma.201505070. https://www.osti.gov/servlets/purl/1255728.
@article{osti_1255728,
title = {Parallel stitching of 2D materials},
author = {Ling, Xi and Wu, Lijun and Lin, Yuxuan and Ma, Qiong and Wang, Ziqiang and Song, Yi and Yu, Lili and Huang, Shengxi and Fang, Wenjing and Zhang, Xu and Hsu, Allen L. and Bie, Yaqing and Lee, Yi -Hsien and Zhu, Yimei and Li, Ju and Jarillo-Herrero, Pablo and Dresselhaus, Mildred and Palacios, Tomas and Kong, Jing},
abstractNote = {Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.},
doi = {10.1002/adma.201505070},
journal = {Advanced Materials},
number = 12,
volume = 28,
place = {United States},
year = {2016},
month = {1}
}

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