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Title: Direct growth of single-crystalline III–V semiconductors on amorphous substrates

Abstract

The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [3];  [1];  [1];  [4];  [2];  [1];  [5];  [4];  [5] more »;  [2];  [1] « less
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Univ. of Southern California, Los Angeles, CA (United States)
  4. National Tsing Hua University, Hsinchu (Taiwan)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1255546
Alternate Identifier(s):
OSTI ID: 1379051
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., and Javey, Ali. Direct growth of single-crystalline III–V semiconductors on amorphous substrates. United States: N. p., 2016. Web. doi:10.1038/ncomms10502.
Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., & Javey, Ali. Direct growth of single-crystalline III–V semiconductors on amorphous substrates. United States. doi:10.1038/ncomms10502.
Chen, Kevin, Kapadia, Rehan, Harker, Audrey, Desai, Sujay, Seuk Kang, Jeong, Chuang, Steven, Tosun, Mahmut, Sutter-Fella, Carolin M., Tsang, Michael, Zeng, Yuping, Kiriya, Daisuke, Hazra, Jubin, Madhvapathy, Surabhi Rao, Hettick, Mark, Chen, Yu-Ze, Mastandrea, James, Amani, Matin, Cabrini, Stefano, Chueh, Yu-Lun, Ager III, Joel W., Chrzan, Daryl C., and Javey, Ali. Wed . "Direct growth of single-crystalline III–V semiconductors on amorphous substrates". United States. doi:10.1038/ncomms10502. https://www.osti.gov/servlets/purl/1255546.
@article{osti_1255546,
title = {Direct growth of single-crystalline III–V semiconductors on amorphous substrates},
author = {Chen, Kevin and Kapadia, Rehan and Harker, Audrey and Desai, Sujay and Seuk Kang, Jeong and Chuang, Steven and Tosun, Mahmut and Sutter-Fella, Carolin M. and Tsang, Michael and Zeng, Yuping and Kiriya, Daisuke and Hazra, Jubin and Madhvapathy, Surabhi Rao and Hettick, Mark and Chen, Yu-Ze and Mastandrea, James and Amani, Matin and Cabrini, Stefano and Chueh, Yu-Lun and Ager III, Joel W. and Chrzan, Daryl C. and Javey, Ali},
abstractNote = {The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.},
doi = {10.1038/ncomms10502},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {1}
}

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