Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping. United States: N. p.,
Web. doi:10.1103/PhysRevB.93.224403.
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., & Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping. United States. doi:10.1103/PhysRevB.93.224403.
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. 2016.
"Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping". United States.
doi:10.1103/PhysRevB.93.224403.
@article{osti_1255476,
title = {Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping},
author = {Sun, F. and Li, N. N. and Chen, B. J. and Jia, Y. T. and Zhang, L. J. and Li, W. M. and Zhao, G. Q. and Xing, L. Y. and Fabbris, G. and Wang, Y. G. and Deng, Z. and Uemura, Y. J. and Mao, H. K. and Haskel, D. and Yang, W. G. and Jin, C. Q.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.224403},
journal = {Physical Review B},
number = 22,
volume = 93,
place = {United States},
year = {2016},
month = {6}
}
