Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping

doi:10.1103/PhysRevB.93.224403

Title: Pressure effect on the magnetism of the diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$ with independent spin and charge doping

Full Record
Other Related Research

Authors:: Sun, F.; Li, N. N.; Chen, B. J.; Jia, Y. T.; Zhang, L. J.; Li, W. M.; Zhao, G. Q.; Xing, L. Y.; Fabbris, G.; Wang, Y. G.; Deng, Z.; Uemura, Y. J.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

Publication Date:: 2016-06-03

Sponsoring Org.:: USDOE

OSTI Identifier:: 1255476

Grant/Contract Number:: AC02-06CH11357; FG02-99ER45775; NA0001974

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 22; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping.  United States: N. p., 2016. 
        Web.  doi:10.1103/PhysRevB.93.224403.

Copy to clipboard


                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., & Jin, C. Q. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping.  United States.  doi:10.1103/PhysRevB.93.224403.

Copy to clipboard


                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q. Fri .  
        "Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping".  United States.  doi:10.1103/PhysRevB.93.224403.

Copy to clipboard


                    
@article{osti_1255476,

  title        = {Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping},

  author       = {Sun, F. and Li, N. N. and Chen, B. J. and Jia, Y. T. and Zhang, L. J. and Li, W. M. and Zhao, G. Q. and Xing, L. Y. and Fabbris, G. and Wang, Y. G. and Deng, Z. and Uemura, Y. J. and Mao, H. K. and Haskel, D. and Yang, W. G. and Jin, C. Q.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.93.224403},

  journal      = {Physical Review B},

  number       = 22,

  volume       = 93,

  place        = {United States},

  year         = {2016},

  month        = {6}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
DOI: 10.1103/PhysRevB.93.224403

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Hole doping and pressure effects on the II-II-V-based diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$

Journal Article Sun, F. ; Zhao, G. Q. ; Escanhoela, Jr., C. A. ; ... - Physical Review B

We investigate doping- and pressure-induced changes in the electronic state of Mn 3d and As 4p orbitals in II-II-V based diluted magnetic semiconductor (Ba _1-x,K _x)(Zn _1-y,Mn _y) ₂As ₂ to shed light into the mechanism of indirect exchange interactions leading to high ferromagnetic ordering temperature (T _c = 230 K in optimally doped samples). A suite of x-ray spectroscopy experiments (emission, absorption and dichroism) show that the emergence, and further enhancement of ferromagnetic interactions with increased hole doping into the As 4p band is accompanied by a decrease in local 3d spin density at Mn sites. This is amore »« less
Cited by 3
DOI: 10.1103/PhysRevB.95.094412

Full Text Available
Pressure effect on the magnetism of the diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$ with independent spin and charge doping

Journal Article Sun, F. ; Li, N. N. ; Chen, B. J. ; ... - Physical Review B
DOI: 10.1103/PhysRevB.93.224403
Effect of Sr doping on the magnetic exchange interactions in manganites of type $L a_{1 - x} S r_{x} M n_{y} A_{1 - y} O_{3} (A = Ga, Ti; 0.1 \leq y \leq 1)$

Journal Article Furrer, Albert ; Podlesnyak, Andrey A. ; Pomjakushina, Ekaterina ; ... - Physical Review B

Strontium doping transforms manganites of type La _{1 - x} Sr _x Mn O ₃ from an insulating antiferromagnet ( x = 0 ) to a metallic ferromagnet ( x > 0.16 ) due to the induced charge carriers (holes). We employed neutron scattering experiments in order to investigate the effect of Sr doping on a tailor-made compound of composition La _0.7 S r _0.3 M n _0.1 Ti _0.3 G a _0.6 O ₃ . By the simultaneous doping with S r ^{2 +} and Ti ^{4 +} ions, the compound remains in the insulating state so thatmore »« less
DOI: 10.1103/PhysRevB.95.104414

Full Text Available
Doping evolution of the second magnetization peak and magnetic relaxation in $(B a_{1 - x} K_{x}) F e_{2} A s_{2}$ single crystals

Journal Article Liu, Yong ; Zhou, Lin ; Sun, Kewei ; ... - Physical Review B

Here, we present a thorough study of doping dependent magnetic hysteresis and relaxation characteristics in single crystals of (Ba _1-xK _x) Fe ₂As ₂ (0.18 ≤ x ≤ 1). The critical current density J _c reaches maximum in the underdoped sample x = 0.26 and then decreases in the optimally doped and overdoped samples. Meanwhile, the magnetic relaxation rate S rapidly increases and the flux creep activation barrier U ₀ sharply decreases in the overdoped sample x = 0.70. These results suggest that vortex pinning is very strong in the underdoped regime, but it is greatly reduced in the optimallymore »« less
Cited by 1
DOI: 10.1103/PhysRevB.97.054511

Full Text Available
Tunable multiferroic order parameters in $S r_{1 - x} B a_{x} M n_{1 - y} T i_{y} O_{3}$

Journal Article Chapagain, Kamal ; Brown, Dennis E. ; Kolesnik, Stanislaw ; ... - Physical Review Materials

Responding to the rapidly increasing demand for efficient energy usage and increased speed and functionality of electronic and spintronic devices, multiferroic oxides have recently emerged as key materials capable of tackling this multifaceted challenge. In this paper, we describe the development of single-site manganese-based multiferroic perovskite materials with modest amounts of nonmagnetic Ti substituted at the magnetic Mn site in Sr _1-xBa _xMn _1-yTi _yO ₃ (SBMTO). Significantly enhanced properties were achieved with ferroelectric-type structural transition temperatures boosted to ~430 K. Ferroelectric distortions with large spontaneous polarization values of ~30 mu C cm ², derived from a point charge model,more »« less
DOI: 10.1103/PhysRevMaterials.3.084401

Similar Records

Title: Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping

Citation Formats

Title: Pressure effect on the magnetism of the diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$ with independent spin and charge doping