Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping

Sun, F.; Li, N. N.; Chen, B. J.; Jia, Y. T.; Zhang, L. J.; Li, W. M.; Zhao, G. Q.; Xing, L. Y.; Fabbris, G.; Wang, Y. G.; Deng, Z.; Uemura, Y. J.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

doi:10.1103/PhysRevB.93.224403

Title: Pressure effect on the magnetism of the diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$ with independent spin and charge doping

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Authors:: Sun, F.; Li, N. N.; Chen, B. J.; Jia, Y. T.; Zhang, L. J.; Li, W. M.; Zhao, G. Q.; Xing, L. Y.; Fabbris, G.; Wang, Y. G.; Deng, Z.; Uemura, Y. J.; Mao, H. K.; Haskel, D.; Yang, W. G.; Jin, C. Q.

Publication Date:: 2016-06-03

Sponsoring Org.:: USDOE

OSTI Identifier:: 1255476

Grant/Contract Number:: AC02-06CH11357; FG02-99ER45775; NA0001974

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 22; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping.  United States: N. p., 2016. 
Web.  doi:10.1103/PhysRevB.93.224403.

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                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., & Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping.  United States.  https://doi.org/10.1103/PhysRevB.93.224403

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                    Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. Fri .  
"Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping".  United States.  https://doi.org/10.1103/PhysRevB.93.224403.

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@article{osti_1255476,

  title        = {Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping},

  author       = {Sun, F. and Li, N. N. and Chen, B. J. and Jia, Y. T. and Zhang, L. J. and Li, W. M. and Zhao, G. Q. and Xing, L. Y. and Fabbris, G. and Wang, Y. G. and Deng, Z. and Uemura, Y. J. and Mao, H. K. and Haskel, D. and Yang, W. G. and Jin, C. Q.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.93.224403},

  journal      = {Physical Review B},

  number       = 22,

  volume       = 93,

  place        = {United States},

  year         = {2016},

  month        = {6}

}

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Title: Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping

Citation Formats

Title: Pressure effect on the magnetism of the diluted magnetic semiconductor $(B a_{1 - x} K_{x}) {(Z n_{1 - y} M n_{y})}_{2} A s_{2}$ with independent spin and charge doping