Pressure effect on the magnetism of the diluted magnetic semiconductor with independent spin and charge doping
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1255476
- Grant/Contract Number:
- AC02-06CH11357; FG02-99ER45775; NA0001974
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 22; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping. United States: N. p., 2016.
Web. doi:10.1103/PhysRevB.93.224403.
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., & Jin, C. Q.. Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping. United States. https://doi.org/10.1103/PhysRevB.93.224403
Sun, F., Li, N. N., Chen, B. J., Jia, Y. T., Zhang, L. J., Li, W. M., Zhao, G. Q., Xing, L. Y., Fabbris, G., Wang, Y. G., Deng, Z., Uemura, Y. J., Mao, H. K., Haskel, D., Yang, W. G., and Jin, C. Q.. Fri .
"Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping". United States. https://doi.org/10.1103/PhysRevB.93.224403.
@article{osti_1255476,
title = {Pressure effect on the magnetism of the diluted magnetic semiconductor ( B a 1 − x K x ) ( Z n 1 − y M n y ) 2 A s 2 with independent spin and charge doping},
author = {Sun, F. and Li, N. N. and Chen, B. J. and Jia, Y. T. and Zhang, L. J. and Li, W. M. and Zhao, G. Q. and Xing, L. Y. and Fabbris, G. and Wang, Y. G. and Deng, Z. and Uemura, Y. J. and Mao, H. K. and Haskel, D. and Yang, W. G. and Jin, C. Q.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.224403},
journal = {Physical Review B},
number = 22,
volume = 93,
place = {United States},
year = {2016},
month = {6}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.93.224403
https://doi.org/10.1103/PhysRevB.93.224403
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Cited by: 22 works
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