Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm-1 K-2 and figure of merit (ZT) value ~0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W-1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
- Authors:
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[1]
; [2]
; [3]
; [4]
; [4]
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- Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH)
- Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy
- Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH); Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics
- Robert Bosch LLC, Cambridge, MA (United States). Research and Technology Center
- Publication Date:
- Grant/Contract Number:
- SC0010831; 51372208; 51472207; 51572226; 2015TD0017; 2015GZ0060; Z2014042; SZJJ2013-034
- Type:
- Published Article
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 10; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Research Org:
- Univ. of Houston, TX (United States); Xihua Univ., Chengdu (China)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation of China (NSFC) (China); Youth Science Innovation Program of Sichuan Province (China); Science and Technology Support Program of Sichuan Province (China); Chunhui Program from Education Ministry of China (China); Xihua Univ. (China)
- Contributing Orgs:
- Chinese Academy of Sciences (CAS), Beijing (China); Robert Bosch LLC, Cambridge, MA (United States)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Doping; Thermal conductivity; Electron densities of states; Carrier density; Density functional theory
- OSTI Identifier:
- 1255315
- Alternate Identifier(s):
- OSTI ID: 1360094