Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm -1 K -2 and figure of merit (ZT) value ~0.6 in NbCoSn 0.9Sb 0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W -1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
- Authors:
-
[1]
; [2]
; [3]
; [4]
; [4]
; [2]
; [1]
- Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH)
- Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy
- Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH); Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics
- Robert Bosch LLC, Cambridge, MA (United States). Research and Technology Center
- Publication Date:
- Grant/Contract Number:
- SC0010831; 51372208; 51472207; 51572226; 2015TD0017; 2015GZ0060; Z2014042; SZJJ2013-034; DOE DE-SC0010831
- Type:
- Published Article
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 10; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Research Org:
- Univ. of Houston, TX (United States); Xihua Univ., Chengdu (China)
- Sponsoring Org:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation of China (NSFC) (China); Youth Science Innovation Program of Sichuan Province (China); Science and Technology Support Program of Sichuan Province (China); Chunhui Program from Education Ministry of China (China); Xihua Univ. (China)
- Contributing Orgs:
- Chinese Academy of Sciences (CAS), Beijing (China); Robert Bosch LLC, Cambridge, MA (United States)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Doping; Thermal conductivity; Electron densities of states; Carrier density; Density functional theory
- OSTI Identifier:
- 1255315
- Alternate Identifier(s):
- OSTI ID: 1360094; OSTI ID: 1416460
He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, and Ren, Zhifeng. Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity. United States: N. p.,
Web. doi:10.1063/1.4952994.
He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, & Ren, Zhifeng. Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity. United States. doi:10.1063/1.4952994.
He, Ran, Huang, Lihong, Wang, Yumei, Samsonidze, Georgy, Kozinsky, Boris, Zhang, Qinyong, and Ren, Zhifeng. 2016.
"Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity". United States.
doi:10.1063/1.4952994.
@article{osti_1255315,
title = {Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity},
author = {He, Ran and Huang, Lihong and Wang, Yumei and Samsonidze, Georgy and Kozinsky, Boris and Zhang, Qinyong and Ren, Zhifeng},
abstractNote = {In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 μW cm-1 K-2 and figure of merit (ZT) value ~0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W-1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.},
doi = {10.1063/1.4952994},
journal = {APL Materials},
number = 10,
volume = 4,
place = {United States},
year = {2016},
month = {6}
}