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Title: Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity

In this paper, we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ~35 ΞΌW cm -1 K -2 and figure of merit (ZT) value ~0.6 in NbCoSn 0.9Sb 0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W -1) is decreased by ~68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
 [1] ;  [2] ;  [3] ;  [4] ;  [4] ;  [2] ;  [1]
  1. Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH)
  2. Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy
  3. Univ. of Houston, TX (United States). Dept. of Physics. Texas Center for Superconductivity (TcSUH); Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics
  4. Robert Bosch LLC, Cambridge, MA (United States). Research and Technology Center
Publication Date:
Grant/Contract Number:
SC0010831; 51372208; 51472207; 51572226; 2015TD0017; 2015GZ0060; Z2014042; SZJJ2013-034; DOE DE-SC0010831
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 10; Journal ID: ISSN 2166-532X
American Institute of Physics (AIP)
Research Org:
Univ. of Houston, TX (United States); Xihua Univ., Chengdu (China)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation of China (NSFC) (China); Youth Science Innovation Program of Sichuan Province (China); Science and Technology Support Program of Sichuan Province (China); Chunhui Program from Education Ministry of China (China); Xihua Univ. (China)
Contributing Orgs:
Chinese Academy of Sciences (CAS), Beijing (China); Robert Bosch LLC, Cambridge, MA (United States)
Country of Publication:
United States
36 MATERIALS SCIENCE; Doping; Thermal conductivity; Electron densities of states; Carrier density; Density functional theory
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1360094; OSTI ID: 1416460