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Title: Tuning thermoelectricity in a Bi 2Se 3 topological insulator via varied film thickness

Abstract

We report thermoelectric transport studies on Bi 2Se 3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi 2Se 3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [3];  [4];  [5];  [6];  [6];  [6];  [6]
  1. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics
  2. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); RIKEN Center for Emergent Matter Science (CEMS), Wako (Japan)
  3. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China); Tsinghua Univ., Beijing (China). Institute for Advanced Study
  4. ENN Intelligent Energy Group, Langfang (China)
  5. ENN Intelligent Energy Group, Langfang (China); Stanford Univ., CA (United States). Dept. of Physics
  6. Tsinghua Univ., Beijing (China). State Key Laboratory of Low Dimensional Quantum Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
Publication Date:
Research Org.:
Stanford Univ., CA (United States). Dept. of Physics
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1254485
Grant/Contract Number:  
AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
New Journal of Physics
Additional Journal Information:
Journal Volume: 18; Journal Issue: 1; Journal ID: ISSN 1367-2630
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; topological insulator; thermoelectricity; transport; Seebeck coefficient

Citation Formats

Guo, Minghua, Wang, Zhenyu, Xu, Yong, Huang, Huaqing, Zang, Yunyi, Liu, Chang, Duan, Wenhui, Gan, Zhongxue, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qikun, and Wang, Yayu. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness. United States: N. p., 2016. Web. doi:10.1088/1367-2630/18/1/015008.
Guo, Minghua, Wang, Zhenyu, Xu, Yong, Huang, Huaqing, Zang, Yunyi, Liu, Chang, Duan, Wenhui, Gan, Zhongxue, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qikun, & Wang, Yayu. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness. United States. doi:10.1088/1367-2630/18/1/015008.
Guo, Minghua, Wang, Zhenyu, Xu, Yong, Huang, Huaqing, Zang, Yunyi, Liu, Chang, Duan, Wenhui, Gan, Zhongxue, Zhang, Shou-Cheng, He, Ke, Ma, Xucun, Xue, Qikun, and Wang, Yayu. Tue . "Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness". United States. doi:10.1088/1367-2630/18/1/015008. https://www.osti.gov/servlets/purl/1254485.
@article{osti_1254485,
title = {Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness},
author = {Guo, Minghua and Wang, Zhenyu and Xu, Yong and Huang, Huaqing and Zang, Yunyi and Liu, Chang and Duan, Wenhui and Gan, Zhongxue and Zhang, Shou-Cheng and He, Ke and Ma, Xucun and Xue, Qikun and Wang, Yayu},
abstractNote = {We report thermoelectric transport studies on Bi2Se3 topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi2Se3 thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.},
doi = {10.1088/1367-2630/18/1/015008},
journal = {New Journal of Physics},
number = 1,
volume = 18,
place = {United States},
year = {2016},
month = {1}
}

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    Works referencing / citing this record:

    Thermal Engineering in Low-Dimensional Quantum Devices: A Tutorial Review of Nonequilibrium Green's Function Methods
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