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Title: Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1254385
Grant/Contract Number:  
SC0010689; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Alkauskas, Audrius, Dreyer, Cyrus E., Lyons, John L., and Van de Walle, Chris G. Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.201304.
Alkauskas, Audrius, Dreyer, Cyrus E., Lyons, John L., & Van de Walle, Chris G. Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors. United States. doi:10.1103/PhysRevB.93.201304.
Alkauskas, Audrius, Dreyer, Cyrus E., Lyons, John L., and Van de Walle, Chris G. Wed . "Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors". United States. doi:10.1103/PhysRevB.93.201304.
@article{osti_1254385,
title = {Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors},
author = {Alkauskas, Audrius and Dreyer, Cyrus E. and Lyons, John L. and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.201304},
journal = {Physical Review B},
number = 20,
volume = 93,
place = {United States},
year = {2016},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.93.201304

Citation Metrics:
Cited by: 7 works
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