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Title: Surface origin and control of resonance Raman scattering and surface band gap in indium nitride

Abstract

Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the (E1, A1) longitudinal optical (LO) near 590 cm-1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap (Eg= 0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer.

Authors:
; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1254064
Alternate Identifier(s):
OSTI ID: 1254066; OSTI ID: 1530242
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
Journal Name: Journal of Physics. D, Applied Physics Journal Volume: 49 Journal Issue: 25; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United Kingdom
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS

Citation Formats

Alarcón-Lladó, Esther, Brazzini, Tommaso, and Ager, Joel W. Surface origin and control of resonance Raman scattering and surface band gap in indium nitride. United Kingdom: N. p., 2016. Web. doi:10.1088/0022-3727/49/25/255102.
Alarcón-Lladó, Esther, Brazzini, Tommaso, & Ager, Joel W. Surface origin and control of resonance Raman scattering and surface band gap in indium nitride. United Kingdom. doi:10.1088/0022-3727/49/25/255102.
Alarcón-Lladó, Esther, Brazzini, Tommaso, and Ager, Joel W. Mon . "Surface origin and control of resonance Raman scattering and surface band gap in indium nitride". United Kingdom. doi:10.1088/0022-3727/49/25/255102.
@article{osti_1254064,
title = {Surface origin and control of resonance Raman scattering and surface band gap in indium nitride},
author = {Alarcón-Lladó, Esther and Brazzini, Tommaso and Ager, Joel W.},
abstractNote = {Resonance Raman scattering measurements were performed on indium nitride thin films under conditions where the surface electron concentration was controlled by an electrolyte gate. As the surface condition is tuned from electron depletion to accumulation, the spectral feature at the expected position of the (E1, A1) longitudinal optical (LO) near 590 cm-1 shifts to lower frequency. The shift is reversibly controlled with the applied gate potential, which clearly demonstrates the surface origin of this feature. The result is interpreted within the framework of a Martin double resonance, where the surface functions as a planar defect, allowing the scattering of long wavevector phonons. The allowed wavevector range, and hence the frequency, is modulated by the electron accumulation due to band gap narrowing. A surface band gap reduction of over 500 meV is estimated for the conditions of maximum electron accumulation. Under conditions of electron depletion, the full InN bandgap (Eg= 0.65 eV) is expected at the surface. The drastic change in the surface band gap is expected to influence the transport properties of devices which utilize the surface electron accumulation layer.},
doi = {10.1088/0022-3727/49/25/255102},
journal = {Journal of Physics. D, Applied Physics},
number = 25,
volume = 49,
place = {United Kingdom},
year = {2016},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1088/0022-3727/49/25/255102

Citation Metrics:
Cited by: 8 works
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Works referenced in this record:

Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy
journal, December 2006


Investigation on −c-InN and a-InN:Mg field effect transistors under electrolyte gate bias
journal, September 2009

  • Lu, Yen-Sheng; Chang, Yuh-Hwa; Hong, Yu-Liang
  • Applied Physics Letters, Vol. 95, Issue 10
  • DOI: 10.1063/1.3216064

Band-gap narrowing in heavily doped many-valley semiconductors
journal, August 1981


Effects of surface states on electrical characteristics of InN and In 1 x Ga x N
journal, July 2007


InN-based anion selective sensors in aqueous solutions
journal, November 2007

  • Lu, Yen-Sheng; Huang, Chi-Cheng; Yeh, J. Andrew
  • Applied Physics Letters, Vol. 91, Issue 20
  • DOI: 10.1063/1.2814035

Mg doped InN and confirmation of free holes in InN
journal, January 2011

  • Wang, K.; Miller, N.; Iwamoto, R.
  • Applied Physics Letters, Vol. 98, Issue 4
  • DOI: 10.1063/1.3543625

Raman scattering by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms
journal, March 2005


Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
journal, February 2013

  • Cho, YongJin; Ramsteiner, Manfred; Brandt, Oliver
  • Applied Physics Letters, Vol. 102, Issue 7
  • DOI: 10.1063/1.4792837

Resonance raman scattering near critical points
journal, September 1974


Inelastic light scattering in hole-accumulation layers on silicon
journal, November 1982


Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging
journal, September 2011

  • Zhu, J. H.; Ning, J. Q.; Zheng, C. C.
  • Applied Physics Letters, Vol. 99, Issue 11
  • DOI: 10.1063/1.3640233

Band-gap renormalization in quasi-two-dimensional systems induced by many-body electron-electron and electron-phonon interactions
journal, March 1989


When group-III nitrides go infrared: New properties and perspectives
journal, July 2009


Raman scattering on intrinsic surface electron accumulation of InN nanowires
journal, August 2010

  • Jeganathan, K.; Purushothaman, V.; Debnath, R. K.
  • Applied Physics Letters, Vol. 97, Issue 9
  • DOI: 10.1063/1.3483758

Experimental and theoretical studies of phonons in hexagonal InN
journal, November 1999

  • Davydov, V. Yu.; Emtsev, V. V.; Goncharuk, I. N.
  • Applied Physics Letters, Vol. 75, Issue 21
  • DOI: 10.1063/1.125330

Optical properties of Si-doped InN grown on sapphire (0001)
journal, December 2003


Multiphonon resonance Raman scattering in In x Ga 1 x N
journal, October 2005


Intrinsic Electron Accumulation at Clean InN Surfaces
journal, January 2004


Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study
journal, October 2009


Quasiparticle properties of a coupled two-dimensional electron-phonon system
journal, November 1989


Probing and modulating surface electron accumulation in InN by the electrolyte gated Hall effect
journal, December 2008

  • Brown, G. F.; Ager, J. W.; Walukiewicz, W.
  • Applied Physics Letters, Vol. 93, Issue 26
  • DOI: 10.1063/1.3062856

Ab initio phonon dispersions of wurtzite AlN, GaN, and InN
journal, March 2000

  • Bungaro, Claudia; Rapcewicz, Krzysztof; Bernholc, J.
  • Physical Review B, Vol. 61, Issue 10
  • DOI: 10.1103/PhysRevB.61.6720

High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer
journal, April 2007

  • Lin, Yu-Syuan; Koa, Shun-Hau; Chan, Chih-Yuan
  • Applied Physics Letters, Vol. 90, Issue 14
  • DOI: 10.1063/1.2719223

Subband energies in accumulation layers on InP
journal, August 1983


A 1 ( LO ) phonon structure in degenerate InN semiconductor films
journal, March 2005


k⋅p method for strained wurtzite semiconductors
journal, July 1996


Effective electron mass and phonon modes in n -type hexagonal InN
journal, February 2002


Selective excitation of E 1 ( LO ) and A 1 ( LO ) phonons with large wave vectors in the Raman spectra of hexagonal InN
journal, August 2009


Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
journal, March 2008


Hole transport and photoluminescence in Mg-doped InN
journal, June 2010

  • Miller, N.; Ager, J. W.; Smith, H. M.
  • Journal of Applied Physics, Vol. 107, Issue 11
  • DOI: 10.1063/1.3427564

Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap
journal, November 2013


Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant Raman spectroscopy
journal, March 2004

  • Cronin, S. B.; Barnett, R.; Tinkham, M.
  • Applied Physics Letters, Vol. 84, Issue 12
  • DOI: 10.1063/1.1666997

Double resonance Raman effects in InN nanowires
journal, March 2012

  • Domènech-Amador, N.; Cuscó, R.; Calarco, R.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 6, Issue 4
  • DOI: 10.1002/pssr.201206057

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs
journal, January 1987


Evidence for phonon-plasmon interaction in InN by Raman spectroscopy
journal, January 2007


Surface optical Raman modes in InN nanostructures
journal, December 2008

  • Sahoo, Satyaprakash; Hu, M. S.; Hsu, C. W.
  • Applied Physics Letters, Vol. 93, Issue 23
  • DOI: 10.1063/1.3040681

Surface charge accumulation of InN films grown by molecular-beam epitaxy
journal, March 2003

  • Lu, Hai; Schaff, William J.; Eastman, Lester F.
  • Applied Physics Letters, Vol. 82, Issue 11
  • DOI: 10.1063/1.1562340

Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films
journal, December 2013

  • Chen, Z. Y.; Yuan, H. T.; Wang, X. Q.
  • Applied Physics Letters, Vol. 103, Issue 25
  • DOI: 10.1063/1.4852175

Determining surface Fermi level pinning position of InN nanowires using electrolyte gating
journal, October 2009

  • Khanal, D. R.; Walukiewicz, W.; Grandal, J.
  • Applied Physics Letters, Vol. 95, Issue 17
  • DOI: 10.1063/1.3255010

Surface chemical modification of InN for sensor applications
journal, September 2004

  • Lu, Hai; Schaff, William J.; Eastman, Lester F.
  • Journal of Applied Physics, Vol. 96, Issue 6
  • DOI: 10.1063/1.1767608

Experimental determination of strain-free Raman frequencies and deformation potentials for the E2 high and A1(LO) modes in hexagonal InN
journal, October 2006

  • Wang, Xinqiang; Che, Song-Bek; Ishitani, Yoshihiro
  • Applied Physics Letters, Vol. 89, Issue 17
  • DOI: 10.1063/1.2364884

Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
journal, May 2008

  • Ager, J. W.; Miller, N.; Jones, R. E.
  • physica status solidi (b), Vol. 245, Issue 5
  • DOI: 10.1002/pssb.200778731

Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers
journal, June 2010


Band structure of indium antimonide
journal, January 1957


Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
journal, August 2007

  • King, P. D. C.; Veal, T. D.; McConville, C. F.
  • Applied Physics Letters, Vol. 91, Issue 9
  • DOI: 10.1063/1.2775807

Identification of Hydroperoxy Species as Reaction Intermediates in the Electrochemical Evolution of Oxygen on Gold
journal, May 2010


Identification of surface optical phonon in wurtzite InN epitaxial thin films by coherent phonon spectroscopy
journal, February 2007

  • Chang, Y. -M.; Chu, H. W.; Shen, C. -H.
  • Applied Physics Letters, Vol. 90, Issue 7
  • DOI: 10.1063/1.2679358