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Title: High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Authors:
 [1]; ORCiD logo [1];  [1];  [1];  [1]
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  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1253928
Grant/Contract Number:  
EE0005403
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States: N. p., 2016. Web. doi:10.1063/1.4951690.
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Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., & Colter, P. C. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States. doi:10.1063/1.4951690.
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Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C. Thu . "High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface". United States. doi:10.1063/1.4951690.
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@article{osti_1253928,
title = {High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface},
author = {Bedair, S. M. and Harmon, Jeffrey L. and Carlin, C. Zachary and Hashem Sayed, Islam E. and Colter, P. C.},
abstractNote = {},
doi = {10.1063/1.4951690},
journal = {Applied Physics Letters},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}
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Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
DOI: 10.1063/1.4951690
Copyright Statement
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Works referenced in this record:

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993

  • Jung, D.; Parker, C. A.; Ramdani, J.
  • Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
  • DOI: 10.1063/1.354753

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156
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