skip to main content

DOE PAGESDOE PAGES

Title: High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1]
  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Publication Date:
Grant/Contract Number:
EE0005403
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1253928

Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C.. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States: N. p., Web. doi:10.1063/1.4951690.
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., & Colter, P. C.. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface. United States. doi:10.1063/1.4951690.
Bedair, S. M., Harmon, Jeffrey L., Carlin, C. Zachary, Hashem Sayed, Islam E., and Colter, P. C.. 2016. "High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface". United States. doi:10.1063/1.4951690.
@article{osti_1253928,
title = {High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface},
author = {Bedair, S. M. and Harmon, Jeffrey L. and Carlin, C. Zachary and Hashem Sayed, Islam E. and Colter, P. C.},
abstractNote = {},
doi = {10.1063/1.4951690},
journal = {Applied Physics Letters},
number = 20,
volume = 108,
place = {United States},
year = {2016},
month = {5}
}

Works referenced in this record:

AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993
  • Jung, D.; Parker, C. A.; Ramdani, J.
  • Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093
  • DOI: 10.1063/1.354753

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156