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Title: Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
ORCiD logo [1] ;  [2] ; ORCiD logo [1] ;  [3]
  1. Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Tohoku Univ., Sendai (Japan); Far Eastern Federal Univ., Vladivostok (Russia)
Publication Date:
Grant/Contract Number:
SC0014189; FG02-08ER46544
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 13; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; domain walls; antiferromagnetism; atomic force microscopy; electric fields; ferromagnetism
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1244608