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Title: Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr 2O 3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr 2O 3, the maximal mobility of 0.1 m/(s Oe) is reached at E≈0.06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr 2O 3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. Furthermore, a split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
ORCiD logo [1] ;  [2] ; ORCiD logo [1] ;  [3]
  1. Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Tohoku Univ., Sendai (Japan); Far Eastern Federal Univ., Vladivostok (Russia)
Publication Date:
Grant/Contract Number:
SC0014189; FG02-08ER46544
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 13; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; domain walls; antiferromagnetism; atomic force microscopy; electric fields; ferromagnetism
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1244608