Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
- Publication Date:
- Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 19; Related Information: CHORUS Timestamp: 2016-12-21 06:28:10; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- OSTI Identifier:
- 1253224