Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
- Authors:
-
[1]
; [1]
; [2]
; [2]
;
[1]
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
- NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
- Publication Date:
- Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- OSTI Identifier:
- 1253224
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F.. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States: N. p.,
Web. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., & Doty, M. F.. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F.. 2016.
"Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells". United States.
doi:10.1063/1.4948954.
@article{osti_1253224,
title = {Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells},
author = {Sellers, D. G. and Chen, E. Y. and Polly, S. J. and Hubbard, S. M. and Doty, M. F.},
abstractNote = {},
doi = {10.1063/1.4948954},
journal = {Journal of Applied Physics},
number = 19,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}
Works referenced in this record:
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961
journal, March 1961
- Shockley, William; Queisser, Hans J.
- Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519