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This content will become publicly available on May 16, 2017

Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Authors:
; ; ; ;
Publication Date:
OSTI Identifier:
1253224
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 19; Related Information: CHORUS Timestamp: 2016-12-21 06:28:10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English