Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
- Authors:
-
[1]
; [1]
; [2]
; [2]
;
[1]
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
- NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
- Publication Date:
- Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 19; Related Information: CHORUS Timestamp: 2018-03-29 20:48:06; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- OSTI Identifier:
- 1253224