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Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Authors:
 [1] ;  [1] ;  [2] ;  [2] ; ORCiD logo [1]
  1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
  2. NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1253224

Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F.. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States: N. p., Web. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., & Doty, M. F.. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells. United States. doi:10.1063/1.4948954.
Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F.. 2016. "Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells". United States. doi:10.1063/1.4948954.
@article{osti_1253224,
title = {Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells},
author = {Sellers, D. G. and Chen, E. Y. and Polly, S. J. and Hubbard, S. M. and Doty, M. F.},
abstractNote = {},
doi = {10.1063/1.4948954},
journal = {Journal of Applied Physics},
number = 19,
volume = 119,
place = {United States},
year = {2016},
month = {5}
}

Works referenced in this record:

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961
  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034