Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Sellers, D. G.; Chen, E. Y.; Polly, S. J.; Hubbard, S. M.; Doty, M. F.

doi:10.1063/1.4948954

Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Authors:

Sellers, D. G. ^[1]; Chen, E. Y. ^[1]; Polly, S. J. ^[2]; Hubbard, S. M. ^[2];

^[1]

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
NanoPower Research Laboratory, Rochester Institute of Technology, Rochester, New York 14623, USA

Publication Date:: Mon May 16 00:00:00 EDT 2016

Sponsoring Org.:: USDOE

OSTI Identifier:: 1253224

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 119 Journal Issue: 19; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4948954.

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                    Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., & Doty, M. F. Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells.  United States.  https://doi.org/10.1063/1.4948954

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                    Sellers, D. G., Chen, E. Y., Polly, S. J., Hubbard, S. M., and Doty, M. F. Mon .  
"Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells".  United States.  https://doi.org/10.1063/1.4948954.

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@article{osti_1253224,

  title        = {Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells},

  author       = {Sellers, D. G. and Chen, E. Y. and Polly, S. J. and Hubbard, S. M. and Doty, M. F.},

  abstractNote = {},

  doi          = {10.1063/1.4948954},

  journal      = {Journal of Applied Physics},

  number       = 19,

  volume       = 119,

  place        = {United States},

  year         = {Mon May 16 00:00:00 EDT 2016},

  month        = {Mon May 16 00:00:00 EDT 2016}

}

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Title: Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

Citation Formats

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Delta-Doping Effects on Quantum-Dot Solar Cells journal, July 2014

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Electronic continuum states and far-infrared absorption of InAs ∕ GaAs quantum dots journal, June 2005

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Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell journal, January 2011

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Modeling and analysis of intraband absorption in quantum-dot-in-well mid-infrared photodetectors journal, February 2012

Efficient upconverted photocurrent through an Auger process in disklike InAs quantum structures for intermediate-band solar cells journal, June 2013

Effect of vicinal substrates on the growth and device performance of quantum dot solar cells
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Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
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Realistic upconverter-enhanced solar cells with non-ideal absorption and recombination efficiencies
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Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
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