Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; Voss, Lars F.; Conway, Adam M.; Shao, Qinghui; Nikolic, Rebecca J.

doi:10.1116/1.4917010

Title: Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂

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Abstract

With this study, icosahedral boron phosphide (B₁₂P₂) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B₁₂P₂ for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10^–4 Ω cm², as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ~l–4 × 10^–4 Ω cm² after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B₁₂P₂ at 700 °C and a reaction layer between Ni and B₁₂P₂ thinner than ~25 nm at 500 °C.

Authors:

Frye, Clint D. ^[1]; Kucheyev, Sergei O. ^[1]; Edgar, James H. ^[2]; Voss, Lars F. ^[1]; Conway, Adam M. ^[1]; Shao, Qinghui ^[1]; Nikolic, Rebecca J. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Kansas State Univ., Manhattan, KS (United States)

Publication Date:: Thu Apr 09 00:00:00 EDT 2015

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1252604

Report Number(s):: LLNL-JRNL-666166
Journal ID: ISSN 0734-2101; JVTAD6

Grant/Contract Number:: AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology A

Additional Journal Information:: Journal Volume: 33; Journal Issue: 3; Journal ID: ISSN 0734-2101

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING; gold; nickel; contact resistance; metal to metal contacts; semiconductor junctions

Citation Formats


                    Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, and Nikolic, Rebecca J. Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2.  United States: N. p., 2015. 
Web.  doi:10.1116/1.4917010.

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                    Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, & Nikolic, Rebecca J. Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2.  United States.  https://doi.org/10.1116/1.4917010

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                    Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, and Nikolic, Rebecca J. Thu .  
"Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2".  United States.  https://doi.org/10.1116/1.4917010.  https://www.osti.gov/servlets/purl/1252604.

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@article{osti_1252604,

  title        = {Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2},

  author       = {Frye, Clint D. and Kucheyev, Sergei O. and Edgar, James H. and Voss, Lars F. and Conway, Adam M. and Shao, Qinghui and Nikolic, Rebecca J.},

  abstractNote = {With this study, icosahedral boron phosphide (B12P2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B12P2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10–4 Ω cm2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contact resistance was ~l–4 × 10–4 Ω cm2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B12P2 at 700 °C and a reaction layer between Ni and B12P2 thinner than ~25 nm at 500 °C.},

  doi          = {10.1116/1.4917010},

  journal      = {Journal of Vacuum Science and Technology A},

  number       = 3,

  volume       = 33,

  place        = {United States},

  year         = {Thu Apr 09 00:00:00 EDT 2015},

  month        = {Thu Apr 09 00:00:00 EDT 2015}

}

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Title: Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2

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Title: Sintered Cr/Pt and Ni/Au ohmic contacts to B₁₂P₂