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Title: Concurrent atomistic–continuum simulations of dislocation–void interactions in fcc crystals

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1252304
Grant/Contract Number:  
DOE/DE-SC0006539
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
International Journal of Plasticity
Additional Journal Information:
Journal Name: International Journal of Plasticity Journal Volume: 65 Journal Issue: C; Journal ID: ISSN 0749-6419
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

Citation Formats

Xiong, Liming, Xu, Shuozhi, McDowell, David L., and Chen, Youping. Concurrent atomistic–continuum simulations of dislocation–void interactions in fcc crystals. United States: N. p., 2015. Web. doi:10.1016/j.ijplas.2014.08.002.
Xiong, Liming, Xu, Shuozhi, McDowell, David L., & Chen, Youping. Concurrent atomistic–continuum simulations of dislocation–void interactions in fcc crystals. United States. doi:10.1016/j.ijplas.2014.08.002.
Xiong, Liming, Xu, Shuozhi, McDowell, David L., and Chen, Youping. Sun . "Concurrent atomistic–continuum simulations of dislocation–void interactions in fcc crystals". United States. doi:10.1016/j.ijplas.2014.08.002.
@article{osti_1252304,
title = {Concurrent atomistic–continuum simulations of dislocation–void interactions in fcc crystals},
author = {Xiong, Liming and Xu, Shuozhi and McDowell, David L. and Chen, Youping},
abstractNote = {},
doi = {10.1016/j.ijplas.2014.08.002},
journal = {International Journal of Plasticity},
number = C,
volume = 65,
place = {United States},
year = {2015},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1016/j.ijplas.2014.08.002

Citation Metrics:
Cited by: 24 works
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