Minority carrier barrier heterojunctions for improved thermoelectric efficiency
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1252081
- Grant/Contract Number:
- SC0001009
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Nano Energy
- Additional Journal Information:
- Journal Name: Nano Energy Journal Volume: 12 Journal Issue: C; Journal ID: ISSN 2211-2855
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Burke, Peter G., Curtin, Benjamin M., Bowers, John E., and Gossard, Arthur C. Minority carrier barrier heterojunctions for improved thermoelectric efficiency. Netherlands: N. p., 2015.
Web. doi:10.1016/j.nanoen.2015.01.037.
Burke, Peter G., Curtin, Benjamin M., Bowers, John E., & Gossard, Arthur C. Minority carrier barrier heterojunctions for improved thermoelectric efficiency. Netherlands. https://doi.org/10.1016/j.nanoen.2015.01.037
Burke, Peter G., Curtin, Benjamin M., Bowers, John E., and Gossard, Arthur C. Sun .
"Minority carrier barrier heterojunctions for improved thermoelectric efficiency". Netherlands. https://doi.org/10.1016/j.nanoen.2015.01.037.
@article{osti_1252081,
title = {Minority carrier barrier heterojunctions for improved thermoelectric efficiency},
author = {Burke, Peter G. and Curtin, Benjamin M. and Bowers, John E. and Gossard, Arthur C.},
abstractNote = {},
doi = {10.1016/j.nanoen.2015.01.037},
journal = {Nano Energy},
number = C,
volume = 12,
place = {Netherlands},
year = {Sun Mar 01 00:00:00 EST 2015},
month = {Sun Mar 01 00:00:00 EST 2015}
}
Free Publicly Available Full Text
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https://doi.org/10.1016/j.nanoen.2015.01.037
https://doi.org/10.1016/j.nanoen.2015.01.037
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Cited by: 19 works
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Works referenced in this record:
Observation of Surface Bound State and Two-Dimensional Energy Band by Electron Tunneling
journal, February 1970
- Tsui, D. C.
- Physical Review Letters, Vol. 24, Issue 7
Optimum band gap of a thermoelectric material
journal, February 1994
- Sofo, J. O.; Mahan, G. D.
- Physical Review B, Vol. 49, Issue 7
nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006
- Maimon, S.; Wicks, G. W.
- Applied Physics Letters, Vol. 89, Issue 15
Thermoelectric evaluation of the dopant density of p-type InAs
journal, June 2009
- Wagener, M. C.; Wagener, V.; Botha, J. R.
- Applied Physics Letters, Vol. 94, Issue 26
Enhancing the thermoelectric figure of merit through the reduction of bipolar thermal conductivity with heterostructure barriers
journal, August 2014
- Bahk, Je-Hyeong; Shakouri, Ali
- Applied Physics Letters, Vol. 105, Issue 5
Approach to the Practical Use of Thermoelectric Power Generation
journal, May 2009
- Kajikawa, Takenobu
- Journal of Electronic Materials, Vol. 38, Issue 7
Efficiently suppressed thermal conductivity in ZnO thin films via periodic introduction of organic layers
journal, January 2014
- Tynell, Tommi; Giri, Ashutosh; Gaskins, John
- J. Mater. Chem. A, Vol. 2, Issue 31
High-Temperature Thermoelectric Characterization of III–V Semiconductor Thin Films by Oxide Bonding
journal, May 2010
- Bahk, Je-Hyeong; Zeng, Gehong; Zide, Joshua M. O.
- Journal of Electronic Materials, Vol. 39, Issue 8
The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
journal, January 2004
- Kroemer, Herbert
- Physica E: Low-dimensional Systems and Nanostructures, Vol. 20, Issue 3-4, p. 196-203
Data analysis for Seebeck coefficient measurements
journal, June 2013
- de Boor, J.; Müller, E.
- Review of Scientific Instruments, Vol. 84, Issue 6
Electron depletion at InAs free surfaces: Doping-induced acceptorlike gap states
journal, May 2006
- Piper, L. F. J.; Veal, T. D.; Lowe, M. J.
- Physical Review B, Vol. 73, Issue 19
Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
journal, April 1991
- Noguchi, M.; Hirakawa, K.; Ikoma, T.
- Physical Review Letters, Vol. 66, Issue 17
The best thermoelectric.
journal, July 1996
- Mahan, G. D.; Sofo, J. O.
- Proceedings of the National Academy of Sciences, Vol. 93, Issue 15
Charge Accumulation at InAs Surfaces
journal, May 1996
- Olsson, L. Ö.; Andersson, C. B. M.; Håkansson, M. C.
- Physical Review Letters, Vol. 76, Issue 19
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
journal, June 2010
- Gautam, N.; Kim, H. S.; Kutty, M. N.
- Applied Physics Letters, Vol. 96, Issue 23
Cross-plane Seebeck coefficient of ErAs:InGaAs∕InGaAlAs superlattices
journal, February 2007
- Zeng, Gehong; Zide, Joshua M. O.; Kim, Woochul
- Journal of Applied Physics, Vol. 101, Issue 3
High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice
journal, July 2012
- Gautam, Nutan; Myers, S.; Barve, A. V.
- Applied Physics Letters, Vol. 101, Issue 2
Commercialization of Thermoelectric Technology
journal, January 2005
- Stabler, Francis R.
- MRS Proceedings, Vol. 886