Preferential void formation at crystallographically ordered grain boundaries in nanotwinned copper thin films
Abstract
We report nanocrystalline materials are expected to have improved radiation resistance as the high density of grain boundary area is thought to act as an effective sink for radiation-induced defects. However, continued absorption of defects can alter the structure of grain boundaries and/or enhance their mobility, eventually leading to microstructural degradation in the form of grain coarsening, thus negating their initial radiation tolerance. Hence, an ideal microstructure might be one with a mix of boundaries that are effective sinks and limit grain coarsening. We show through in situ electron irradiation experiments, however, that this is an insufficient condition. Our observations indicate that even a high density of low energy coherent twin boundaries, supposedly stabilizing the microstructure against grain coarsening, can be a detriment in that it biases the mobility of vacancies accumulating during irradiation thereby resulting in preferential void nucleation near twin boundaries. These observations highlight the fact that radiation induced grain boundary migration depends greatly on the topology of the grain boundary network and that the migration of high-angle grain boundaries can be hindered when coordinated at triple junctions composed of at least two low-energy boundaries, e.g., coincidence site lattice boundaries.
- Authors:
-
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Shimane University, Matsue (Japan); Core Research for Evolutional Science and Technology (CREST), Tokyo (Japan)
- Osaka University (Japan)
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1886154
- Alternate Identifier(s):
- OSTI ID: 1251845
- Report Number(s):
- LLNL-JRNL-665138
Journal ID: ISSN 1359-6454; 786421
- Grant/Contract Number:
- AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Acta Materialia
- Additional Journal Information:
- Journal Volume: 96; Journal Issue: N/A; Journal ID: ISSN 1359-6454
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; grain boundary networks; radiation defects; grain boundary migration; triple junctions
Citation Formats
LaGrange, Thomas, Arakawa, Kazuto, Yasuda, Hidehiro, and Kumar, Mukul. Preferential void formation at crystallographically ordered grain boundaries in nanotwinned copper thin films. United States: N. p., 2015.
Web. doi:10.1016/j.actamat.2015.06.015.
LaGrange, Thomas, Arakawa, Kazuto, Yasuda, Hidehiro, & Kumar, Mukul. Preferential void formation at crystallographically ordered grain boundaries in nanotwinned copper thin films. United States. https://doi.org/10.1016/j.actamat.2015.06.015
LaGrange, Thomas, Arakawa, Kazuto, Yasuda, Hidehiro, and Kumar, Mukul. Wed .
"Preferential void formation at crystallographically ordered grain boundaries in nanotwinned copper thin films". United States. https://doi.org/10.1016/j.actamat.2015.06.015. https://www.osti.gov/servlets/purl/1886154.
@article{osti_1886154,
title = {Preferential void formation at crystallographically ordered grain boundaries in nanotwinned copper thin films},
author = {LaGrange, Thomas and Arakawa, Kazuto and Yasuda, Hidehiro and Kumar, Mukul},
abstractNote = {We report nanocrystalline materials are expected to have improved radiation resistance as the high density of grain boundary area is thought to act as an effective sink for radiation-induced defects. However, continued absorption of defects can alter the structure of grain boundaries and/or enhance their mobility, eventually leading to microstructural degradation in the form of grain coarsening, thus negating their initial radiation tolerance. Hence, an ideal microstructure might be one with a mix of boundaries that are effective sinks and limit grain coarsening. We show through in situ electron irradiation experiments, however, that this is an insufficient condition. Our observations indicate that even a high density of low energy coherent twin boundaries, supposedly stabilizing the microstructure against grain coarsening, can be a detriment in that it biases the mobility of vacancies accumulating during irradiation thereby resulting in preferential void nucleation near twin boundaries. These observations highlight the fact that radiation induced grain boundary migration depends greatly on the topology of the grain boundary network and that the migration of high-angle grain boundaries can be hindered when coordinated at triple junctions composed of at least two low-energy boundaries, e.g., coincidence site lattice boundaries.},
doi = {10.1016/j.actamat.2015.06.015},
journal = {Acta Materialia},
number = N/A,
volume = 96,
place = {United States},
year = {Wed Jun 24 00:00:00 EDT 2015},
month = {Wed Jun 24 00:00:00 EDT 2015}
}
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Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces
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