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Title: Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb x,Bi 1–x) 2Te 3

Here, we report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr 0.12Bi 0.26Sb 0.62) 2Te 3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ℏω < 3.0eV. We observed a peak in the real part of Θ K(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of Θ K in the ultrathin film limit, d ≥ 2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4] ;  [4] ;  [4] ;  [4]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Simon Fraser Univ., Burnaby, BC (Canada)
  3. Univ. of California, Los Angeles, CA (United States)
  4. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Report Number(s):
SLAC-PUB-16522
Journal ID: ISSN 1098-0121; PRBMDO
Grant/Contract Number:
AC02-76SF00515; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 92; Journal Issue: 21; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1251565
Alternate Identifier(s):
OSTI ID: 1234116; OSTI ID: 1439980

Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, and Zhang, Shou -Cheng. Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3. United States: N. p., Web. doi:10.1103/PhysRevB.92.214440.
Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, & Zhang, Shou -Cheng. Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3. United States. doi:10.1103/PhysRevB.92.214440.
Patankar, Shreyas, Hinton, J. P., Griesmar, Joel, Orenstein, J., Dodge, J. S., Kou, Xufeng, Pan, Lei, Wang, Kang L., Bestwick, A. J., Fox, E. J., Goldhaber-Gordon, D., Wang, Jing, and Zhang, Shou -Cheng. 2015. "Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3". United States. doi:10.1103/PhysRevB.92.214440. https://www.osti.gov/servlets/purl/1251565.
@article{osti_1251565,
title = {Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx,Bi1–x)2Te3},
author = {Patankar, Shreyas and Hinton, J. P. and Griesmar, Joel and Orenstein, J. and Dodge, J. S. and Kou, Xufeng and Pan, Lei and Wang, Kang L. and Bestwick, A. J. and Fox, E. J. and Goldhaber-Gordon, D. and Wang, Jing and Zhang, Shou -Cheng},
abstractNote = {Here, we report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ℏω < 3.0eV. We observed a peak in the real part of ΘK(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘK in the ultrathin film limit, d ≥ 2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.},
doi = {10.1103/PhysRevB.92.214440},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 21,
volume = 92,
place = {United States},
year = {2015},
month = {12}
}

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010

Review of 3D topological insulator thin-film growth by molecular beam epitaxy and potential applications
journal, January 2013
  • He, Liang; Kou, Xufeng; Wang, Kang L.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2, p. 50-63
  • DOI: 10.1002/pssr.201307003

Topological field theory of time-reversal invariant insulators
journal, November 2008
  • Qi, Xiao-Liang; Hughes, Taylor L.; Zhang, Shou-Cheng
  • Physical Review B, Vol. 78, Issue 19, Article No. 195424
  • DOI: 10.1103/PhysRevB.78.195424