Title: Evidence for cascade overlap and grain boundary enhanced amorphization in silicon carbide irradiated with Kr ions

Journal Article · · Acta Materialia

Not Available

Sponsoring Organization:
USDOE Office of Nuclear Energy (NE); USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357; FG02-08ER46493
OSTI ID:
1251465
Journal Information:
Acta Materialia, Journal Name: Acta Materialia Journal Issue: C Vol. 99; ISSN 1359-6454
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (37)

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Computer simulation of a 10 keV Si displacement cascade in SiC
  • Devanathan, R.; Weber, W. J.; Diaz de la Rubia, T.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4 https://doi.org/10.1016/S0168-583X(98)00084-6
journal May 1998
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Models and mechanisms of irradiation-induced amorphization in ceramics journal May 2000
Effects of grain size and grain boundaries on defect production in nanocrystalline 3C–SiC journal May 2010
Radiation effects in SiC for nuclear structural applications journal June 2012
Handbook of SiC properties for fuel performance modeling journal September 2007
Thermal conductivity of SiC after heavy ions irradiation journal January 2010
Ab initio based rate theory model of radiation induced amorphization in β-SiC journal July 2011
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation journal February 2014
Ion-beam induced defects and nanoscale amorphous clusters in silicon carbide journal February 2004
Srim-2003 journal June 2004
Nanoscale engineering of radiation tolerant silicon carbide journal January 2012
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Amorphization of silicon carbide by carbon displacement journal May 2004
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Origin of radiation tolerance in 3C-SiC with nanolayered planar defects journal July 2013
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Cascade overlap and amorphization in 3 C − SiC : Defect accumulation, topological features, and disordering journal July 2002
Volume swelling of amorphous SiC during ion-beam irradiation journal July 2005
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Response of nanocrystalline 3 C silicon carbide to heavy-ion irradiation journal October 2009
Analysis of grain boundary sinks and interstitial diffusion in neutron-irradiated SiC journal February 2011
Role of recombination kinetics and grain size in radiation-induced amorphization journal December 2012
Energy barriers for point-defect reactions in 3 C -SiC journal August 2013
Amorphization Driven by Defect-Induced Mechanical Instability journal October 2013
Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide journal October 2011
Efficient Annealing of Radiation Damage Near Grain Boundaries via Interstitial Emission journal March 2010
Amorphization of nanocrystalline 3C-SiC irradiated with Si + ions journal December 2010
Temperature and irradiation species dependence of radiation response of nanocrystalline silicon carbide journal December 2014

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