Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.
Abstract
In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase ismore »
- Authors:
-
- National Research Center Kurchatov Institute, Moscow (Russia); Russian Acad. Sci., Moscow (Russia)
- National Research Center Kurchatov Institute, Moscow (Russia); M. V. Lomonosov Moscow State Univ., Moscow (Russia)
- Russian Acad. Sci., Moscow (Russia)
- Russian Acad. Sci., St. Petersburg (Russia); Peter the Great St. Petersburg Polytechnic Univ., St. Petersburg (Russia)
- Russian Acad. Sci., St. Petersburg (Russia)
- Argonne National Lab. (ANL), Argonne, IL (United States); Tata Institute of Fundamental Research, Mumbai (India)
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1251159
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 16; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; magnetic properties and materials; spintronics; two-dimensional materials
Citation Formats
Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., and Tripathi, V. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.. United States: N. p., 2015.
Web. doi:10.1038/srep17158.
Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., & Tripathi, V. Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.. United States. https://doi.org/10.1038/srep17158
Oveshnikov, L. N., Kulbachinskii, V. A., Davydov, A. B., Aronzon, B. A., Rozhansky, I. V., Averkiev, N. S., Kugel, K. I., and Tripathi, V. Tue .
"Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.". United States. https://doi.org/10.1038/srep17158. https://www.osti.gov/servlets/purl/1251159.
@article{osti_1251159,
title = {Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.},
author = {Oveshnikov, L. N. and Kulbachinskii, V. A. and Davydov, A. B. and Aronzon, B. A. and Rozhansky, I. V. and Averkiev, N. S. and Kugel, K. I. and Tripathi, V.},
abstractNote = {In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.},
doi = {10.1038/srep17158},
journal = {Scientific Reports},
number = 16,
volume = 5,
place = {United States},
year = {Tue Nov 24 00:00:00 EST 2015},
month = {Tue Nov 24 00:00:00 EST 2015}
}
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