Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1249878
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Superlattices and Microstructures
- Additional Journal Information:
- Journal Name: Superlattices and Microstructures Journal Volume: 82 Journal Issue: C; Journal ID: ISSN 0749-6036
- Publisher:
- Elsevier
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Fullam, S., Ray, N. J., and Karpov, E. G. Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures. United Kingdom: N. p., 2015.
Web. doi:10.1016/j.spmi.2015.02.032.
Fullam, S., Ray, N. J., & Karpov, E. G. Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures. United Kingdom. https://doi.org/10.1016/j.spmi.2015.02.032
Fullam, S., Ray, N. J., and Karpov, E. G. Mon .
"Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures". United Kingdom. https://doi.org/10.1016/j.spmi.2015.02.032.
@article{osti_1249878,
title = {Cyclic resistive switching effect in plasma electrolytically oxidized mesoporous Pt/TiO2 structures},
author = {Fullam, S. and Ray, N. J. and Karpov, E. G.},
abstractNote = {},
doi = {10.1016/j.spmi.2015.02.032},
journal = {Superlattices and Microstructures},
number = C,
volume = 82,
place = {United Kingdom},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}
Free Publicly Available Full Text
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https://doi.org/10.1016/j.spmi.2015.02.032
https://doi.org/10.1016/j.spmi.2015.02.032
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Cited by: 7 works
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Works referenced in this record:
A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review
journal, March 2014
- Acharyya, D.; Hazra, A.; Bhattacharyya, P.
- Microelectronics Reliability, Vol. 54, Issue 3
A microstructural study of the structure of plasma electrolytically oxidized titanium foils
journal, March 2014
- El Achhab, Mhamed; Erbe, Andreas; Koschek, Georg
- Applied Physics A, Vol. 116, Issue 4
Kinetic aspects of aluminium titanate layer formation on titanium alloys by plasma electrolytic oxidation
journal, November 2002
- Yerokhin, A. L.; Leyland, A.; Matthews, A.
- Applied Surface Science, Vol. 200, Issue 1-4
A Flexible Solution-Processed Memristor
journal, July 2009
- Gergel-Hackett, N.; Hamadani, B.; Dunlap, B.
- IEEE Electron Device Letters, Vol. 30, Issue 7
Nanoionics-based resistive switching memories
journal, November 2007
- Waser, Rainer; Aono, Masakazu
- Nature Materials, Vol. 6, Issue 11, p. 833-840
Effect of post annealing on the resistive switching of TiO2 thin film
journal, November 2009
- Kim, Wan-Gee; Rhee, Shi-Woo
- Microelectronic Engineering, Vol. 86, Issue 11
Approaches for improving the performance of filament-type resistive switching memory
journal, February 2011
- Lian, WenTai; Long, ShiBing; Lü, HangBing
- Chinese Science Bulletin, Vol. 56, Issue 4-5
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
journal, July 2011
- Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho
- Current Applied Physics, Vol. 11, Issue 4
A Pt/TiO 2 /Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays
journal, April 2010
- Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong
- Nanotechnology, Vol. 21, Issue 19
Identification of a determining parameter for resistive switching of TiO2 thin films
journal, June 2005
- Rohde, Christina; Choi, Byung Joon; Jeong, Doo Seok
- Applied Physics Letters, Vol. 86, Issue 26
Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
journal, January 2006
- Kim, Kyung Min; Choi, Byung Joon; Koo, Bon Wook
- Electrochemical and Solid-State Letters, Vol. 9, Issue 12
Titanium dioxide thin films for next-generation memory devices
journal, July 2012
- Kim, Seong Keun; Kim, Kyung Min; Jeong, Doo Seok
- Journal of Materials Research, Vol. 28, Issue 3
Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions
journal, August 2009
- Do, Young Ho; Kwak, June Sik; Bae, Yoon Cheol
- Applied Physics Letters, Vol. 95, Issue 9
Enhanced nonvolatile resistive switching in dilutely cobalt doped TiO2
journal, November 2009
- Bogle, Kashinath A.; Bachhav, Mukesh N.; Deo, Meenal S.
- Applied Physics Letters, Vol. 95, Issue 20
Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior
journal, December 2010
- Yoon, Jung Ho; Kim, Kyung Min; Lee, Min Hwan
- Applied Physics Letters, Vol. 97, Issue 23
Chemistry-Driven Signal Transduction in a Mesoporous Pt/TiO 2 System
journal, July 2013
- Karpov, Eduard G.; Hashemian, Mohammad A.; Dasari, Suhas K.
- The Journal of Physical Chemistry C, Vol. 117, Issue 30
Nanobatteries in redox-based resistive switches require extension of memristor theory
journal, April 2013
- Valov, I.; Linn, E.; Tappertzhofen, S.
- Nature Communications, Vol. 4, Issue 1
Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
journal, June 2010
- Huang, Jiun-Jia; Kuo, Chih-Wei; Chang, Wei-Chen
- Applied Physics Letters, Vol. 96, Issue 26
Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
journal, July 2000
- Rossnagel, S. M.; Sherman, A.; Turner, F.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 18, Issue 4
Three-dimensional 4F2 ReRAM cell with CMOS logic compatible process
conference, December 2010
- Ching-Hua Wang,
- 2010 IEEE International Electron Devices Meeting (IEDM), 2010 International Electron Devices Meeting
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005
- Choi, B. J.; Jeong, D. S.; Kim, S. K.
- Journal of Applied Physics, Vol. 98, Issue 3
A solution processed nonvolatile resistive memory device with Ti/CdSe quantum dot/Ti-TiOx/CdSe quantum dot/indium tin-oxide structure
journal, October 2011
- Kannan, V.; Rhee, J. K.
- Journal of Applied Physics, Vol. 110, Issue 7