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Title: Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb / Si ( 1 1 1 ) ( 7 × 7 )

The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.
Authors:
 [1] ;  [1] ;  [2]
  1. Maria Curie-Sklodowska Univ., Lublin (Poland)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
Publication Date:
Report Number(s):
IS-J-8964
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:
AC0207CH11358; 2014/13/B/ST5/04442
Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Research Org:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1249345
Alternate Identifier(s):
OSTI ID: 1238822

Jałochowski, M., Zdyb, R., and Tringides, M. C.. Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7). United States: N. p., Web. doi:10.1103/PhysRevLett.116.086101.
Jałochowski, M., Zdyb, R., & Tringides, M. C.. Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7). United States. doi:10.1103/PhysRevLett.116.086101.
Jałochowski, M., Zdyb, R., and Tringides, M. C.. 2016. "Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7)". United States. doi:10.1103/PhysRevLett.116.086101. https://www.osti.gov/servlets/purl/1249345.
@article{osti_1249345,
title = {Correlations between In Situ Conductivity and Uniform-Height Epitaxial Morphology in Pb/Si(111)₋(7×7)},
author = {Jałochowski, M. and Zdyb, R. and Tringides, M. C.},
abstractNote = {The growth of Pb on Si(111)-7x7 at temperatures from 72 K to 201 K has been investigated using in situ electrical resistivity measurements and Scanning Tunneling Microscopy (STM). For temperatures T>140 K the specific resistivity ρ(θ) vs coverage θ shows an unusual "hump", instead of the expected monotonic decrease with θ. This novel result correlates well with the formation of uniform height 8-layer Pb islands and the superdiffusive motion of the wetting layer, despite the low temperatures. A model of the film resistivity as two resistors in series, the amorphous wetting layer and the crystalline islands, explains quantitatively the resistivity dependence on θ.},
doi = {10.1103/PhysRevLett.116.086101},
journal = {Physical Review Letters},
number = 8,
volume = 116,
place = {United States},
year = {2016},
month = {2}
}