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Title: Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires

Abstract

Here, we report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

Authors:
 [1];  [1];  [2];  [3];  [3];  [1];  [1];  [1];  [1];  [4]
  1. Michigan State Univ., East Lansing, MI (United States)
  2. Jet Propulsion Lab., Pasadena, CA (United States)
  3. Howard Univ., Washington, DC (United States)
  4. NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1249081
Report Number(s):
SAND-2016-1054J
Journal ID: ISSN 1530-6984; 619146
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 7; Journal Issue: 5; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Jacobs, Benjamin W., Ayres, Virginia M., Petkov, Mihail P., Halpern, Joshua B., He, Maoqi, Baczewski, Andrew D., McElroy, Kaylee, Crimp, Martin A., Zhang, Jiaming, and Shaw, Harry C. Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires. United States: N. p., 2007. Web. doi:10.1021/nl062871y.
Jacobs, Benjamin W., Ayres, Virginia M., Petkov, Mihail P., Halpern, Joshua B., He, Maoqi, Baczewski, Andrew D., McElroy, Kaylee, Crimp, Martin A., Zhang, Jiaming, & Shaw, Harry C. Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires. United States. doi:10.1021/nl062871y.
Jacobs, Benjamin W., Ayres, Virginia M., Petkov, Mihail P., Halpern, Joshua B., He, Maoqi, Baczewski, Andrew D., McElroy, Kaylee, Crimp, Martin A., Zhang, Jiaming, and Shaw, Harry C. Sat . "Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires". United States. doi:10.1021/nl062871y. https://www.osti.gov/servlets/purl/1249081.
@article{osti_1249081,
title = {Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires},
author = {Jacobs, Benjamin W. and Ayres, Virginia M. and Petkov, Mihail P. and Halpern, Joshua B. and He, Maoqi and Baczewski, Andrew D. and McElroy, Kaylee and Crimp, Martin A. and Zhang, Jiaming and Shaw, Harry C.},
abstractNote = {Here, we report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.},
doi = {10.1021/nl062871y},
journal = {Nano Letters},
number = 5,
volume = 7,
place = {United States},
year = {2007},
month = {4}
}

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Cited by: 28 works
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