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Title: Tunable inverse topological heterostructure utilizing ( B i 1 - x I n x ) 2 S e 3 and multichannel weak-antilocalization effect

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [1] ;  [1]
  1. State Univ. of New Jersey, Piscataway, NJ (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-112062-2016-JA
Journal ID: ISSN 2469-9950; PRBMDO; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:
SC00112704; AC02-98CH10886
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 12; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1248807
Alternate Identifier(s):
OSTI ID: 1242588