Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer
Abstract
We demonstrate the selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices using a silicon nitride (SiNx) capping layer. The (SiNx) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1248572
- Report Number(s):
- SAND-2016-0433J
Journal ID: ISSN 1882-0778; 618634
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Express
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 1882-0778
- Publisher:
- Japan Society of Applied Physics
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., and Montaño, Ines. Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer. United States: N. p., 2015.
Web. doi:10.7567/APEX.8.061004.
Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., & Montaño, Ines. Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer. United States. https://doi.org/10.7567/APEX.8.061004
Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., and Montaño, Ines. Mon .
"Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer". United States. https://doi.org/10.7567/APEX.8.061004. https://www.osti.gov/servlets/purl/1248572.
@article{osti_1248572,
title = {Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer},
author = {Wierer, Jonathan J. and Allerman, Andrew A. and Skogen, Erik J. and Tauke-Pedretti, Anna and Vawter, Gregory A. and Montaño, Ines},
abstractNote = {We demonstrate the selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices using a silicon nitride (SiNx) capping layer. The (SiNx) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.},
doi = {10.7567/APEX.8.061004},
journal = {Applied Physics Express},
number = 6,
volume = 8,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}
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