Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1248427
- Grant/Contract Number:
- SC0001134
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Crystal Growth
- Additional Journal Information:
- Journal Name: Journal of Crystal Growth Journal Volume: 426 Journal Issue: C; Journal ID: ISSN 0022-0248
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2. Netherlands: N. p., 2015.
Web. doi:10.1016/j.jcrysgro.2015.03.049.
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., & Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2. Netherlands. https://doi.org/10.1016/j.jcrysgro.2015.03.049
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. Tue .
"Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2". Netherlands. https://doi.org/10.1016/j.jcrysgro.2015.03.049.
@article{osti_1248427,
title = {Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2},
author = {Leung, Benjamin and Tsai, Miao-Chan and Song, Jie and Zhang, Yu and Xiong, Kanglin and Yuan, Ge and Coltrin, Michael E. and Han, Jung},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.03.049},
journal = {Journal of Crystal Growth},
number = C,
volume = 426,
place = {Netherlands},
year = {Tue Sep 01 00:00:00 EDT 2015},
month = {Tue Sep 01 00:00:00 EDT 2015}
}
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https://doi.org/10.1016/j.jcrysgro.2015.03.049
https://doi.org/10.1016/j.jcrysgro.2015.03.049
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Cited by: 4 works
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