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Title: Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2

Authors:
; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 426 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1248427

Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.03.049.
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., & Han, Jung. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2. Netherlands. doi:10.1016/j.jcrysgro.2015.03.049.
Leung, Benjamin, Tsai, Miao-Chan, Song, Jie, Zhang, Yu, Xiong, Kanglin, Yuan, Ge, Coltrin, Michael E., and Han, Jung. 2015. "Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2". Netherlands. doi:10.1016/j.jcrysgro.2015.03.049.
@article{osti_1248427,
title = {Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2},
author = {Leung, Benjamin and Tsai, Miao-Chan and Song, Jie and Zhang, Yu and Xiong, Kanglin and Yuan, Ge and Coltrin, Michael E. and Han, Jung},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.03.049},
journal = {Journal of Crystal Growth},
number = C,
volume = 426,
place = {Netherlands},
year = {2015},
month = {9}
}