Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors
Abstract
Rapid advanced in nanoscience rely on continuous improvements of matter manipulation at near atomic scales. Currently, well characterized, robust, resist-based lithography carries the brunt of the nanofabrication process. However, use of local electron, ion and physical probe methods is also expanding, driven largely by their ability to fabricate without the multi-step preparation processes that can result in contamination from resists and solvents. Furthermore, probe based methods extend beyond nanofabrication to nanomanipulation and imaging, vital ingredients to rapid transition to prototyping and testing of layered 2D heterostructured devices. In this work we demonstrate that helium ion interaction, in a Helium Ion Microscope (HIM), with the surface of bulk copper indium thiophosphate CuMIIIP2X6 (M = Cr, In; X= S, Se), (CITP) results in the control of ferroelectric domains, and growth of cylindrical nanostructures with enhanced conductivity; with material volumes scaling with the dosage of the beam. The nanostructures are oxygen rich, sulfur poor, and with the copper concentration virtually unchanged as confirmed by Energy Dispersive X-ray (EDX). Scanning Electron Microscopy (SEM) imaging contrast as well as Scanning Microwave Microscopy (SMM) measurements suggest enhanced conductivity in the formed particle, whereas Atomic Force Microscopy (AFM) measurements indicate that the produced structures have lower dissipationmore »
- Authors:
-
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1247934
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 11; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; helium ion microscopy; atomic force microscopy; layered materials; ferroelectricity; 2D crystals
Citation Formats
Belianinov, Alex, Iberi, Vighter, Tselev, Alexander, Susner, Michael A., McGuire, Michael A., Joy, David, Jesse, Stephen, Rondinone, Adam J., Kalinin, Sergei V., and Ovchinnikova, Olga S. Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors. United States: N. p., 2016.
Web. doi:10.1021/acsami.5b12056.
Belianinov, Alex, Iberi, Vighter, Tselev, Alexander, Susner, Michael A., McGuire, Michael A., Joy, David, Jesse, Stephen, Rondinone, Adam J., Kalinin, Sergei V., & Ovchinnikova, Olga S. Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors. United States. https://doi.org/10.1021/acsami.5b12056
Belianinov, Alex, Iberi, Vighter, Tselev, Alexander, Susner, Michael A., McGuire, Michael A., Joy, David, Jesse, Stephen, Rondinone, Adam J., Kalinin, Sergei V., and Ovchinnikova, Olga S. Tue .
"Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors". United States. https://doi.org/10.1021/acsami.5b12056. https://www.osti.gov/servlets/purl/1247934.
@article{osti_1247934,
title = {Polarization Control via He-Ion Beam Induced Nanofabrication in Layered Ferroelectric Semiconductors},
author = {Belianinov, Alex and Iberi, Vighter and Tselev, Alexander and Susner, Michael A. and McGuire, Michael A. and Joy, David and Jesse, Stephen and Rondinone, Adam J. and Kalinin, Sergei V. and Ovchinnikova, Olga S.},
abstractNote = {Rapid advanced in nanoscience rely on continuous improvements of matter manipulation at near atomic scales. Currently, well characterized, robust, resist-based lithography carries the brunt of the nanofabrication process. However, use of local electron, ion and physical probe methods is also expanding, driven largely by their ability to fabricate without the multi-step preparation processes that can result in contamination from resists and solvents. Furthermore, probe based methods extend beyond nanofabrication to nanomanipulation and imaging, vital ingredients to rapid transition to prototyping and testing of layered 2D heterostructured devices. In this work we demonstrate that helium ion interaction, in a Helium Ion Microscope (HIM), with the surface of bulk copper indium thiophosphate CuMIIIP2X6 (M = Cr, In; X= S, Se), (CITP) results in the control of ferroelectric domains, and growth of cylindrical nanostructures with enhanced conductivity; with material volumes scaling with the dosage of the beam. The nanostructures are oxygen rich, sulfur poor, and with the copper concentration virtually unchanged as confirmed by Energy Dispersive X-ray (EDX). Scanning Electron Microscopy (SEM) imaging contrast as well as Scanning Microwave Microscopy (SMM) measurements suggest enhanced conductivity in the formed particle, whereas Atomic Force Microscopy (AFM) measurements indicate that the produced structures have lower dissipation and a lower Young s modulus.},
doi = {10.1021/acsami.5b12056},
journal = {ACS Applied Materials and Interfaces},
number = 11,
volume = 8,
place = {United States},
year = {2016},
month = {2}
}
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Works referencing / citing this record:
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