Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires
Abstract
The vapor–liquid–solid process is a fundamental and widely used mechanism for the growth of nanowires. In this article, experimental observations have been carried out to explain the growth mechanism of silicon-based nanowires using a solid-bulk silicon source as unique precursor. In addition, the synthesis consisted of a thermal treatment at 900°C under an Ar-H2 atmosphere with a low residual O2 concentration. Lastly, the presence of SiO in gaseous phase, originated via the active oxidation of the Si substrate, is shown as the principal factor responsible for the nanowires growth, via a process commonly termed as solid–vapor–liquid–solid.
- Authors:
-
- Universidad Autonoma de Madrid (Spain). Departamento de Fisica Aplicada and Instituto Nicolas Cabrera
- University of Turabo, Gurabo, PR (United States). Nanomaterials Research Group, School of Natural Sciences and Technology
- Publication Date:
- Research Org.:
- University of Rochester, NY (United States). Lab. for Laser Energetics
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1335947
- Alternate Identifier(s):
- OSTI ID: 1247554
- Grant/Contract Number:
- NA0000672
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Surface Science
- Additional Journal Information:
- Journal Volume: 345; Journal ID: ISSN 0169-4332
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; SiOx nanowires; Active oxidation; VLS process; CVD; SiO gas
Citation Formats
Gomez-Martinez, A., Marquez, F., and Morant, C. Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires. United States: N. p., 2015.
Web. doi:10.1016/j.apsusc.2015.03.102.
Gomez-Martinez, A., Marquez, F., & Morant, C. Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires. United States. https://doi.org/10.1016/j.apsusc.2015.03.102
Gomez-Martinez, A., Marquez, F., and Morant, C. Tue .
"Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires". United States. https://doi.org/10.1016/j.apsusc.2015.03.102. https://www.osti.gov/servlets/purl/1335947.
@article{osti_1335947,
title = {Experimental evidence of the generation of gaseous SiO as precursor for the growth of SiOx nanowires},
author = {Gomez-Martinez, A. and Marquez, F. and Morant, C.},
abstractNote = {The vapor–liquid–solid process is a fundamental and widely used mechanism for the growth of nanowires. In this article, experimental observations have been carried out to explain the growth mechanism of silicon-based nanowires using a solid-bulk silicon source as unique precursor. In addition, the synthesis consisted of a thermal treatment at 900°C under an Ar-H2 atmosphere with a low residual O2 concentration. Lastly, the presence of SiO in gaseous phase, originated via the active oxidation of the Si substrate, is shown as the principal factor responsible for the nanowires growth, via a process commonly termed as solid–vapor–liquid–solid.},
doi = {10.1016/j.apsusc.2015.03.102},
journal = {Applied Surface Science},
number = ,
volume = 345,
place = {United States},
year = {Tue Mar 24 00:00:00 EDT 2015},
month = {Tue Mar 24 00:00:00 EDT 2015}
}
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