High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Chan, Silvia H.; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1088/0268-1242/31/6/065008

Title: High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

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Authors:

; Keller, Stacia; Tahhan, Maher; Li, Haoran; Romanczyk, Brian; DenBaars, Steven P.; Mishra, Umesh K.

Publication Date:: Thu Apr 14 00:00:00 EDT 2016

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1247432

Grant/Contract Number:: AR0000451

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Semiconductor Science and Technology

Additional Journal Information:: Journal Volume: 31; Journal Issue: 6; Journal ID: ISSN 0268-1242

Publisher:: IOP Publishing

Country of Publication:: United Kingdom

Language:: English

Citation Formats


                    Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., and Mishra, Umesh K. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces.  United Kingdom: N. p., 2016. 
Web.  doi:10.1088/0268-1242/31/6/065008.

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                    Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., & Mishra, Umesh K. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces.  United Kingdom.  https://doi.org/10.1088/0268-1242/31/6/065008

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                    Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., and Mishra, Umesh K. Thu .  
"High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces".  United Kingdom.  https://doi.org/10.1088/0268-1242/31/6/065008.

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@article{osti_1247432,

  title        = {High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces},

  author       = {Chan, Silvia H. and Keller, Stacia and Tahhan, Maher and Li, Haoran and Romanczyk, Brian and DenBaars, Steven P. and Mishra, Umesh K.},

  abstractNote = {},

  doi          = {10.1088/0268-1242/31/6/065008},

  journal      = {Semiconductor Science and Technology},

  number       = 6,

  volume       = 31,

  place        = {United Kingdom},

  year         = {Thu Apr 14 00:00:00 EDT 2016},

  month        = {Thu Apr 14 00:00:00 EDT 2016}

}

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https://doi.org/10.1088/0268-1242/31/6/065008

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