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Title: High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces

Authors:
ORCiD logo ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AR0000451
Type:
Publisher's Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Volume: 31; Journal Issue: 6; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1247432

Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., and Mishra, Umesh K.. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces. United Kingdom: N. p., Web. doi:10.1088/0268-1242/31/6/065008.
Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., & Mishra, Umesh K.. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces. United Kingdom. doi:10.1088/0268-1242/31/6/065008.
Chan, Silvia H., Keller, Stacia, Tahhan, Maher, Li, Haoran, Romanczyk, Brian, DenBaars, Steven P., and Mishra, Umesh K.. 2016. "High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces". United Kingdom. doi:10.1088/0268-1242/31/6/065008.
@article{osti_1247432,
title = {High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces},
author = {Chan, Silvia H. and Keller, Stacia and Tahhan, Maher and Li, Haoran and Romanczyk, Brian and DenBaars, Steven P. and Mishra, Umesh K.},
abstractNote = {},
doi = {10.1088/0268-1242/31/6/065008},
journal = {Semiconductor Science and Technology},
number = 6,
volume = 31,
place = {United Kingdom},
year = {2016},
month = {4}
}