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Title: Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots

Authors:
ORCiD logo ; ; ; ; ;
Publication Date:
Grant/Contract Number:
EE0005325
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 425 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1246631

Zhao, Zhexin, Laghumavarapu, Ramesh B., Simmonds, Paul J., Ji, Haiming, Liang, Baolai, and Huffaker, Diana L.. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.02.049.
Zhao, Zhexin, Laghumavarapu, Ramesh B., Simmonds, Paul J., Ji, Haiming, Liang, Baolai, & Huffaker, Diana L.. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots. Netherlands. doi:10.1016/j.jcrysgro.2015.02.049.
Zhao, Zhexin, Laghumavarapu, Ramesh B., Simmonds, Paul J., Ji, Haiming, Liang, Baolai, and Huffaker, Diana L.. 2015. "Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots". Netherlands. doi:10.1016/j.jcrysgro.2015.02.049.
@article{osti_1246631,
title = {Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots},
author = {Zhao, Zhexin and Laghumavarapu, Ramesh B. and Simmonds, Paul J. and Ji, Haiming and Liang, Baolai and Huffaker, Diana L.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.02.049},
journal = {Journal of Crystal Growth},
number = C,
volume = 425,
place = {Netherlands},
year = {2015},
month = {9}
}