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Title: Stable vicinal step orientations in m-plane GaN

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1246427
Grant/Contract Number:  
SC0001009
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 411 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., and Speck, J. S. Stable vicinal step orientations in m-plane GaN. Netherlands: N. p., 2015. Web. doi:10.1016/j.jcrysgro.2014.10.032.
Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., & Speck, J. S. Stable vicinal step orientations in m-plane GaN. Netherlands. https://doi.org/10.1016/j.jcrysgro.2014.10.032
Kelchner, K. M., Kuritzky, L. Y., Nakamura, S., DenBaars, S. P., and Speck, J. S. Sun . "Stable vicinal step orientations in m-plane GaN". Netherlands. https://doi.org/10.1016/j.jcrysgro.2014.10.032.
@article{osti_1246427,
title = {Stable vicinal step orientations in m-plane GaN},
author = {Kelchner, K. M. and Kuritzky, L. Y. and Nakamura, S. and DenBaars, S. P. and Speck, J. S.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2014.10.032},
journal = {Journal of Crystal Growth},
number = C,
volume = 411,
place = {Netherlands},
year = {Sun Feb 01 00:00:00 EST 2015},
month = {Sun Feb 01 00:00:00 EST 2015}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.jcrysgro.2014.10.032

Citation Metrics:
Cited by: 12 works
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Works referenced in this record:

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
journal, December 2010


Advantages and remaining issues of state-of-the-art m -plane freestanding GaN substrates grown by halide vapor phase epitaxy for m -plane InGaN epitaxial growth
journal, January 2012


Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN
journal, December 2013

  • Armstrong, A. M.; Kelchner, K.; Nakamura, S.
  • Applied Physics Letters, Vol. 103, Issue 23
  • DOI: 10.1063/1.4841575

High-power blue-violet AlGaN-cladding-free m -plane InGaN/GaN laser diodes
journal, October 2011

  • Farrell, R. M.; Haeger, D. A.; Hsu, P. S.
  • Applied Physics Letters, Vol. 99, Issue 17
  • DOI: 10.1063/1.3656970

Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
journal, September 2010

  • Kelchner, Kathryn M.; Farrell, Robert M.; Lin, You-Da
  • Applied Physics Express, Vol. 3, Issue 9
  • DOI: 10.1143/APEX.3.092103

Optical properties of extended and localized states in m -plane InGaN quantum wells
journal, March 2013

  • Marcinkevičius, S.; Kelchner, K. M.; Nakamura, S.
  • Applied Physics Letters, Vol. 102, Issue 10
  • DOI: 10.1063/1.4794904

Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy
journal, April 2013


Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
journal, May 2009

  • Fujito, Kenji; Kubo, Shuichi; Fujimura, Isao
  • MRS Bulletin, Vol. 34, Issue 5, p. 313-317
  • DOI: 10.1557/mrs2009.92

Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
journal, May 2009

  • Feezell, Daniel F.; Schmidt, Mathew C.; DenBaars, Steven P.
  • MRS Bulletin, Vol. 34, Issue 5
  • DOI: 10.1557/mrs2009.93

Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
journal, September 2012

  • Holder, Casey; Speck, James S.; DenBaars, Steven P.
  • Applied Physics Express, Vol. 5, Issue 9
  • DOI: 10.1143/APEX.5.092104

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
journal, October 2013

  • Pourhashemi, A.; Farrell, R. M.; Hardy, M. T.
  • Applied Physics Letters, Vol. 103, Issue 15
  • DOI: 10.1063/1.4824773

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
journal, May 2012

  • Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen
  • Applied Physics Letters, Vol. 100, Issue 20
  • DOI: 10.1063/1.4719100

Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
journal, June 2010

  • Wu, Feng; Lin, You-Da; Chakraborty, Arpan
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3447940

Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes
journal, September 2009


Assessment of deep level defects in m -plane GaN grown by metalorganic chemical vapor deposition
journal, February 2012

  • Henry, T. A.; Armstrong, A.; Kelchner, K. M.
  • Applied Physics Letters, Vol. 100, Issue 8
  • DOI: 10.1063/1.3687700

High-quality nonpolar m -plane GaN substrates grown by HVPE
journal, May 2008

  • Fujito, Kenji; Kiyomi, Kazumasa; Mochizuki, Tae
  • physica status solidi (a), Vol. 205, Issue 5
  • DOI: 10.1002/pssa.200778709

Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
journal, February 2009

  • Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi
  • Applied Physics Letters, Vol. 94, Issue 7
  • DOI: 10.1063/1.3078818

Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
journal, November 2007

  • Hirai, A.; Jia, Z.; Schmidt, M. C.
  • Applied Physics Letters, Vol. 91, Issue 19
  • DOI: 10.1063/1.2802570

Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate
journal, July 2009

  • Lin, You-Da; Hardy, Matthew T.; Hsu, Po Shan
  • Applied Physics Express, Vol. 2
  • DOI: 10.1143/APEX.2.082102

Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
journal, November 2013