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Title: On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Publication Date:
Grant/Contract Number:
AC04-94AL85000
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 415 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1246418

Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., and Wierer, J. J.. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2014.12.034.
Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., & Wierer, J. J.. On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers. Netherlands. doi:10.1016/j.jcrysgro.2014.12.034.
Koleske, D. D., Fischer, A. J., Bryant, B. N., Kotula, P. G., and Wierer, J. J.. 2015. "On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers". Netherlands. doi:10.1016/j.jcrysgro.2014.12.034.
@article{osti_1246418,
title = {On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers},
author = {Koleske, D. D. and Fischer, A. J. and Bryant, B. N. and Kotula, P. G. and Wierer, J. J.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2014.12.034},
journal = {Journal of Crystal Growth},
number = C,
volume = 415,
place = {Netherlands},
year = {2015},
month = {1}
}