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Title: On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Publication Date:
Grant/Contract Number:
AC04-94AL85000
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-04-05 20:44:11; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1246418