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Title: On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590 nm with AlGaN interlayers

Authors:
; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 415; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-07-04 09:41:59; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1246418