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Title: Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth Journal Volume: 425 Journal Issue: C; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1246377

Karow, Matthias M., Faleev, Nikolai N., Smith, David J., and Honsberg, Christiana B.. Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.03.051.
Karow, Matthias M., Faleev, Nikolai N., Smith, David J., & Honsberg, Christiana B.. Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties. Netherlands. doi:10.1016/j.jcrysgro.2015.03.051.
Karow, Matthias M., Faleev, Nikolai N., Smith, David J., and Honsberg, Christiana B.. 2015. "Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties". Netherlands. doi:10.1016/j.jcrysgro.2015.03.051.
@article{osti_1246377,
title = {Defect creation in InGaAs/GaAs multiple quantum wells–I. Structural properties},
author = {Karow, Matthias M. and Faleev, Nikolai N. and Smith, David J. and Honsberg, Christiana B.},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.03.051},
journal = {Journal of Crystal Growth},
number = C,
volume = 425,
place = {Netherlands},
year = {2015},
month = {9}
}