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Title: A method for determining average damage depth of sawn crystalline silicon wafers

Authors:
 [1] ;  [2] ;  [2]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
  2. National Renewable Energy Laboratory, Golden, Colorado 80401, USA, New Jersey Institute of Technology, Newark, New Jersey 07102, USA
Publication Date:
Grant/Contract Number:
AC36-08-GO28308
Type:
Publisher's Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Name: Review of Scientific Instruments Journal Volume: 87 Journal Issue: 4; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1245685

Sopori, B., Devayajanam, S., and Basnyat, P.. A method for determining average damage depth of sawn crystalline silicon wafers. United States: N. p., Web. doi:10.1063/1.4944792.
Sopori, B., Devayajanam, S., & Basnyat, P.. A method for determining average damage depth of sawn crystalline silicon wafers. United States. doi:10.1063/1.4944792.
Sopori, B., Devayajanam, S., and Basnyat, P.. 2016. "A method for determining average damage depth of sawn crystalline silicon wafers". United States. doi:10.1063/1.4944792.
@article{osti_1245685,
title = {A method for determining average damage depth of sawn crystalline silicon wafers},
author = {Sopori, B. and Devayajanam, S. and Basnyat, P.},
abstractNote = {},
doi = {10.1063/1.4944792},
journal = {Review of Scientific Instruments},
number = 4,
volume = 87,
place = {United States},
year = {2016},
month = {4}
}