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Title: Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

Abstract

We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. Here, the complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [3];  [4];  [5];  [2];  [1]
+ Show Author Affiliations
  1. Ghent Univ. (Belgium)
  2. KU Leuven (Belgium)
  3. Univ. of Antwerp (Belgium)
  4. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  5. Univ. of Cape Town, Rondebosch (South Africa); iThemba LABs, Somerset West (South Africa)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); European Research Council (ERC)
OSTI Identifier:
1354477
Alternate Identifier(s):
OSTI ID: 1245504
Report Number(s):
BNL-112994-2016-JA
Journal ID: ISSN 0021-8979; JAPIAU
Grant/Contract Number:  
SC00112704; AC02-98CH10886; #335078-COLOURATOMS; GOA/14/007; GOA 01G01513
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Semiconductors; X-ray diffraction; Crystal structure; Transmission electron microscopy; Polycrystalline material; Artificial neural networks; Chemical bonding; Epitaxy; Rutherford backscattering spectroscopy; Phase transitions

Citation Formats

De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., and Detavernier, C. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111). United States: N. p., 2016. Web. doi:10.1063/1.4945317.
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De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., & Detavernier, C. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111). United States. https://doi.org/10.1063/1.4945317
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De Schutter, B., Van Stiphout, K., Santos, N. M., Bladt, E., Jordan-Sweet, J., Bals, S., Lavoie, C., Comrie, C. M., Vantomme, A., and Detavernier, C. Tue . "Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)". United States. https://doi.org/10.1063/1.4945317. https://www.osti.gov/servlets/purl/1354477.
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@article{osti_1354477,
title = {Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)},
author = {De Schutter, B. and Van Stiphout, K. and Santos, N. M. and Bladt, E. and Jordan-Sweet, J. and Bals, S. and Lavoie, C. and Comrie, C. M. and Vantomme, A. and Detavernier, C.},
abstractNote = {We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. Here, the complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.},
doi = {10.1063/1.4945317},
journal = {Journal of Applied Physics},
number = 13,
volume = 119,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2016},
month = {Tue Apr 05 00:00:00 EDT 2016}
}
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https://doi.org/10.1063/1.4945317
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    Works referencing / citing this record:

    Improving the morphological stability of nickel germanide by tantalum and tungsten additions
    journal, March 2018

    • Jablonka, L.; Kubart, T.; Gustavsson, F.
    • Applied Physics Letters, Vol. 112, Issue 10
    • DOI: 10.1063/1.5019440

    Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge 0.9 Sn 0.1 system during solid-state reaction
    journal, August 2018

    • Quintero, A.; Gergaud, P.; Aubin, J.
    • Journal of Applied Physics, Vol. 124, Issue 8
    • DOI: 10.1063/1.5040924

    Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase
    journal, July 2018

    • Quintero, Andrea; Gergaud, Patrice; Aubin, Joris
    • Journal of Applied Crystallography, Vol. 51, Issue 4
    • DOI: 10.1107/s1600576718008786
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