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Title: Ultrafast and band-selective Auger recombination in InGaN quantum wells

Authors:
 [1] ; ORCiD logo [1] ;  [2] ;  [2] ;  [1]
  1. Department of Chemistry, Columbia University, New York, New York 10027, USA
  2. Sandia National Laboratories, Albuquerque, New Mexico 87123, USA
Publication Date:
Grant/Contract Number:
AC04-94AL85000
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 108 Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1245500

Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y.. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States: N. p., Web. doi:10.1063/1.4945669.
Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., & Zhu, X. -Y.. Ultrafast and band-selective Auger recombination in InGaN quantum wells. United States. doi:10.1063/1.4945669.
Williams, Kristopher W., Monahan, Nicholas R., Koleske, Daniel D., Crawford, Mary H., and Zhu, X. -Y.. 2016. "Ultrafast and band-selective Auger recombination in InGaN quantum wells". United States. doi:10.1063/1.4945669.
@article{osti_1245500,
title = {Ultrafast and band-selective Auger recombination in InGaN quantum wells},
author = {Williams, Kristopher W. and Monahan, Nicholas R. and Koleske, Daniel D. and Crawford, Mary H. and Zhu, X. -Y.},
abstractNote = {},
doi = {10.1063/1.4945669},
journal = {Applied Physics Letters},
number = 14,
volume = 108,
place = {United States},
year = {2016},
month = {4}
}

Works referenced in this record:

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010