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Title: Tunable topological states in electron-doped HTT-Pt

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USDOE Office of Science (SC), Basic Energy Sciences (BES)
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Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 93 Journal Issue: 16; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Zhang, Xiaoming, Wang, Zhenhai, Zhao, Mingwen, and Liu, Feng. Tunable topological states in electron-doped HTT-Pt. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.165401.
Zhang, Xiaoming, Wang, Zhenhai, Zhao, Mingwen, & Liu, Feng. Tunable topological states in electron-doped HTT-Pt. United States. doi:10.1103/PhysRevB.93.165401.
Zhang, Xiaoming, Wang, Zhenhai, Zhao, Mingwen, and Liu, Feng. Fri . "Tunable topological states in electron-doped HTT-Pt". United States. doi:10.1103/PhysRevB.93.165401.
title = {Tunable topological states in electron-doped HTT-Pt},
author = {Zhang, Xiaoming and Wang, Zhenhai and Zhao, Mingwen and Liu, Feng},
abstractNote = {},
doi = {10.1103/PhysRevB.93.165401},
journal = {Physical Review B},
number = 16,
volume = 93,
place = {United States},
year = {2016},
month = {4}

Journal Article:
Free Publicly Available Full Text
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DOI: 10.1103/PhysRevB.93.165401

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Cited by: 11 works
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